高增益ZnO肖特基紫外光电探测器光响应特性  

Responsivity Characteristics of ZnO Schottky Ultraviolet Photodetectors with High Gain

作　　者：段雨晗 蒋大勇[1,2] 赵曼 DUAN Yuhan;JIANG Dayong;ZHAO Man(School of Materials Science and Engineering,Changchun University of Science and Technology,Changchun 130022,China;Engineering Research Center of Optoelectronic Functional Materials,Ministry of Education,Changchun 130022,China)

机构地区：[1]长春理工大学材料科学与工程学院,吉林长春130022 [2]光电功能材料教育部工程研究中心,吉林长春130022

出　　处：《发光学报》2023年第10期1816-1823,共8页Chinese Journal of Luminescence

基　　金：吉林省科技发展计划项目(YDZJ202301ZYTS266);吉林省科学技术协会项目(QT202223);国家自然科学基金(62274016)。

摘　　要：ZnO宽禁带半导体紫外光电探测器具有稳定性高、成本低等诸多优势,在国防、医疗、环境监测等领域具有重要的应用前景。本文采用射频磁控技术在SiO_(2)衬底上制备了ZnO薄膜,在此基础上获得了具有高增益的金属-半导体-金属(MSM)结构的ZnO紫外光电探测器。10 V偏压下,探测器的响应度和外量子效率分别为4.90 A/W和1668%。这是由于光照情况下,半导体与金属界面处的空穴俘获产生高增益所导致的。此外,进一步研究了增益效应、外加偏压和耗尽层宽度对ZnO紫外光电探测器响应度的调控规律与影响机制,为高性能紫外光电探测器的研制与性能调控提供了重要的参考依据。The wide bandgap semiconductor ZnO ultraviolet(UV)photodetector has many advantages,such as high stability,low cost,and has important application prospects in fields such as national defense,medical care,and environmental monitoring.In this work,ZnO thin films were fabricated on SiO_(2) substrate using radio frequency magnetron sputtering.Subsequently,a ZnO UV photodetector with a high-gain metal-semiconductor-metal(MSM)structure was achieved.At a bias voltage of 10 V,the detector exhibited a responsivity of 4.90 A/W and an external quantum efficiency of 1668%.This high gain was attributed to the hole trapping at the semiconductor-metal interface under illumination.Furthermore,the modulation rules and influence mechanisms of gain effect,applied bias voltage,and depletion layer width on the responsivity of ZnO UV photodetector were thoroughly investigated.This research provides an important reference for the development and performance control of high-performance UV photodetectors.

关 键 词：ZNO 紫外光电探测器 响应度 增益效应 耗尽层 

分 类 号：O472[理学—半导体物理]