2.4 GHz频段射频前端高线性度SiGe低噪声放大器设计  

Design of 2.4 GHz RF Front-end High Linearity SiGe Low Noise Amplifier

作　　者：傅海鹏 史昕宇 FU Haipeng;SHI Xinyu(School of Microelectronics,Tianjin University,Tianjin 300072,China)

机构地区：[1]天津大学微电子学院,天津300072

出　　处：《湖南大学学报（自然科学版）》2023年第10期77-83,共7页Journal of Hunan University:Natural Sciences

基　　金：国家自然科学基金资助项目(62074110)。

摘　　要：为满足高性能射频前端接收部分对高线性度的需求,基于SiGe BiCMOS工艺设计并实现了一款工作在2.4 GHz频段的高线性度低噪声放大器(Low Noise Amplifier,LNA).该放大器采用Cascode结构在增益与噪声之间取得平衡,在Cascode结构输入和输出间并联反馈电容,实现输入端噪声与增益的同时匹配.设计了一种改进的动态偏置有源电流镜以提升输入1 dB压缩点及输入三阶交调点的线性度指标.为满足应用需求,LNA与射频开关及电源模块集成组成低噪声射频前端接收芯片进行流片加工测试.测试结果表明:在工作频率2.4~2.5GHz内,整个接收芯片增益为14.6~15.2 dB,S_(11)、S_(11)<-9.8 dB,NF<2.1 dB,2.45 GHz输入1 dB压缩点为-2.7 dBm,输入三阶交调点为+12 dBm.芯片面积为1.23 mm×0.91 mm.该测试结果与仿真结果表现出较好的一致性,所设计的LNA展现出了较好的线性度表现.To meet the high linearity requirement of high-performance RF front-end receivers,a high linearity low noise amplifier(LNA) operating at 2.4 GHz based on SiGe BiCMOS technology is proposed.The amplifier adopts the cascade structure to achieve a balance between gain and noise,and the feedback capacitor is connected in parallel between the input and output of the Cascode structure to achieve simultaneous noise and power match.An improved dynamic bias active current mirror is designed to improve the linearity parameters of the input 1 dB compression point and the input-referred third-order intercept point.To meet the requirements in application,LNA is integrated with an RF switch and power module to form an RF receiver front-end chip for processing and testing.The test results show that:within the operating frequency range of 2.4 ~ 2.5 GHz,the gain of the whole receiver chip is 14.6 ~ 15.2 dB.Return loss -9.8 dB,and NF 2.1 dB.At 2.45 GHz,the input 1 dB compression point is-2.7dBm,and the input-referred third-order intercept point is +12 dBm.The chip area is 1.23 mm×0.91 mm.The test results are consistent with the simulation results,and the designed LNA exhibits good linearity performance.

关 键 词：低噪声放大器 线性度 射频前端芯片 BICMOS工艺 

分 类 号：TN402[电子电信—微电子学与固体电子学]