GaN基LED表面三维凹球结构的制备及其发光增强  

Preparation and Luminescence Enhancement of Three-Dimensional Concave Sphere Structure on Surface of GaN-Based LED

作　　者：尹红星 毛鹏程 许冰 Yin Hongxing;Mao Pengcheng;Xu Bing(Analysis&Testing Center,Beijing Institute of Technology,Beijing 100081,China)

机构地区：[1]北京理工大学分析测试中心,北京100081

出　　处：《微纳电子技术》2023年第9期1495-1502,共8页Micronanoelectronic Technology

基　　金：北京理工大学研究生教研教改重点项目(1770012052101)。

摘　　要：以紫外曝光技术为基础,得到了欠曝光条件下的三维凹球结构,结合菲涅尔衍射效应和邻近效应开发了一种制备密排三维周期性凹球结构的方法,并重点研究了掩膜版类型和光刻胶厚度对曝光图形的影响。实验结果表明,采用六方密排结构的明场掩膜图案,当光刻胶厚度为1.3~1.5μm时,可以得到周期为3~5μm、占空比接近100%的三维凹球结构阵列。该三维凹球结构阵列在LED发光增强及微透镜阵列等方面有广阔的应用前景,并在实验中实现了GaN基LED发光增强163.4%,通过角分辨分析得到LED发光在法线方向的30°~65°和115°~150°增强最为明显,扩大了LED光出射的角度,对LED作为显示器件增大可视角度具有重要意义。Based on ultraviolet exposure technology,the three-dimensional concave sphere structure under the condition of underexposure was obtained.Combined Fresnel diffraction effect and proximity effect,a method of preparing close-packed three-dimensional periodic concave sphere structure was developed,and the influences of the mask plate type and photoresist thickness on the exposure pattern were researched emphatically.The experimental results show that by using the close-packed hexagonal bright-field mask pattern,a three-dimensional concave sphere structure array with a period of 3-5μm and a duty cycle ratio of nearly 100%can be obtained when the thickness of the photoresist is 1.3-1.5μm.The three-dimensional concave sphere structure array has a wide application prospect in LED luminescence enhancement and microlens array.In the experiment,the GaN-based LED luminous enhancement is achieved by 163.4%.Analysis result of the angle resolution shows that LED luminous enhancement is the most obvious in the normal directions of 30°-65°and 115°-150°,expanding the angle of light emission of the LED,which is of great significance for LEDs as display devices to increase the visual angle.

关 键 词：GAN LED发光增强 三维凹球结构 紫外(UV)曝光 欠曝光 菲涅尔衍射 邻近效应 

分 类 号：TN305.7[电子电信—物理电子学] TN364.2