异类叠层基电荷陷阱存储器件的性能研究  

Study on Performance of Charge Trap Memory Devices with Heterogeneous Laminated Structure

作　　者：汤振杰[1] 张希威 李荣[2] TANG Zhen-jie;ZHANG Xi-wei;LI Rong(School of Physics and Electrical Engineering,Anyang Normal University,Anyang Henan 455000,China;School of Mathematics and Statistics,Anyang Normal University,Anyang Henan 455000,China)

机构地区：[1]安阳师范学院物理与电气工程学院,河南安阳455000 [2]安阳师范学院数学与统计学院,河南安阳455000

出　　处：《热处理技术与装备》2023年第5期29-31,43,共4页Heat Treatment Technology and Equipment

基　　金：河南省科技攻关项目(212102210481);河南省高等学校重点科研项目(23A140011)。

摘　　要：采用脉冲激光沉积系统制备了Hf_(0.5)Si_(0.5)O_(2)/Zr_(0.3)Si_(0.7)O_(2)异类叠层薄膜基电荷陷阱存储器件。结果表明,经过高温退火处理,异类叠层基电荷陷阱存储器件表现出优异的电荷存储窗口、数据保持能力和瞬时写入/擦除速度。这主要归因于高温退火处理减小了异类叠层存储层中的浅能级缺陷密度,提高了叠层结构的界面陷阱密度,而且叠层结构形成的层间势垒,有效抑制了电子向衬底和电极方向的泄露。The charge trap memory devices with Hf_(0.5)Si_(0.5)O_(2)/Zr_(0.3)Si_(0.7)O_(2),heterogeneous laminated struc-ture were fabricated by the pulse laser deposition system.The results demonstrated that the memory device showed excellent memory window,data retention and transient program/erase speed.This was ascribe to decreasing of shallow energy-level trap density and increasing of interfacial deep energy-level traps after rapid annealing treatment.In addition,the Hf_(0.5)Si_(0.5)O_(2)/Zr_(0.3)Si_(0.7)O_(2),heterogeneous laminated structure introduced potential barrier of interface,which effectively inhibited the electron tunneling to substrate and electrode.

关 键 词：脉冲激光沉积 异类叠层 存储器 

分 类 号：O484.1[理学—固体物理]