封装对905 nm大功率窄脉冲激光发光特性的影响  

Effect of Packaging on Luminescence Characteristics of 905 nm High Power Narrow Pulse Laser

作　　者：王达鹏 李佳 吕怡凡[1] 陈立红 WANG Dapeng;LI Jia;LYU Yifan;CHEN Lihong(Hebei Jiewei Electronic Technology Co.,Ltd.,Shijiazhuang 050299,China;The 13th Research Institute of China ELectronic Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]河北杰微科技有限公司,河北石家庄050299 [2]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《电声技术》2023年第6期141-143,147,共4页Audio Engineering

摘　　要：905 nm大功率窄脉冲激光在激光雷达测距领域有广阔的应用前景。当激光器工作速率逐渐提高时,封装带来的寄生参数对激光器输出特性的影响不容忽略。文章以905 nm边发射激光器为研究对象,在CaN MOSFET驱动下测试并对比导电胶板上芯片(Chips on Board,COB)封装激光器、导电胶同轴(Transistor Outline,TO)封装激光器、金锡同轴封装激光器的功率、波长、脉宽以及寄生电感等数据,得出CaN MOSFET驱动下的导电胶COB封装激光器性能最佳的结论。905 nm high power narrow pulse laser has a wide application prospect in the field of lidar ranging.When the working rate of the laser increases gradually,the influence of parasitic parameters brought by packaging on the output characteristics of the laser will be hard to ignore.In this paper,the 905 nm edge-emitting laser is taken as the research object,and the power,wavelength,pulse width and parasitic inductance of the Chips on Board(COB)encapsulated laser,the Transistor Outline(TO)encapsulated laser and the Suk Kim coaxial encapsulated laser are tested and compared,and it is concluded that the performance of the COB encapsulated laser driven by CaNMOSFETis the best.

关 键 词：CaN MOSFET驱动 905 nm边发射激光器 封装 窄脉冲 

分 类 号：TN29[电子电信—物理电子学]