功率模块封装用高强度高热导率Si_(3)N_(4)陶瓷的研究进展  

Progress of High Strength and High Thermal Conductivity Si_(3)N_(4)Ceramics for Power Module Packaging

作　　者：付师 杨增朝[1] 李江涛[1,2] FU Shi;YANG Zengchao;LI Jiangtao(Key Laboratory of Cryogenics,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院理化技术研究所,低温重点实验室,北京100190 [2]中国科学院大学材料与光电研究中心,北京100049

出　　处：《无机材料学报》2023年第10期1117-1132,共16页Journal of Inorganic Materials

基　　金：国家重点研发计划(2022YFE0201200);国家自然科学基金(92263205)。

摘　　要：随着以SiC和GaN为代表的第三代宽禁带半导体的崛起,电力电子器件向高输出功率和高功率密度的方向快速发展,对用于功率模块封装的陶瓷基板材料提出更高的性能要求。传统的Al_(2)O_(3)和AlN陶瓷由于热导率较低或力学性能较差,均不能满足新一代功率模块封装的应用需求,相较之下,新发展的Si_(3)N_(4)陶瓷因兼具高强度和高热导率,成为最具潜力的绝缘性散热基板材料。近年来,研究人员通过筛选有效的烧结助剂体系,并对烧结工艺进行优化,在制备高强度高热导率Si_(3)N_(4)陶瓷方面取得一系列突破性进展。另外,伴随覆铜Si_(3)N_(4)陶瓷基板工程应用的推进,对其制成的基板的力、热和电学性能的评价也成为研究热点。本文从影响Si_(3)N_(4)陶瓷热导率的关键因素出发,重点对通过烧结助剂的选择和烧结工艺的改进来提高Si_(3)N_(4)陶瓷热导率的国内外工作进行综述。此外,首次系统总结并介绍了Si_(3)N_(4)陶瓷基板的介电击穿强度以及覆铜后性能评价研究的最新进展,最后展望了高热导率Si_(3)N_(4)陶瓷基板的未来发展方向。With the rise of the third-generation wide-bandgap semiconductors represented by SiC and GaN,power electronic devices are developing rapidly towards high output power and high power density,putting forward higher performance requirements on ceramic substrate materials used for power module packaging.The conventional Al_(2)O_(3)and AlN ceramics are inadequate for the new generation of power module packaging applications due to low thermal conductivity or poor mechanical properties.In comparison,the newly developed Si_(3)N_(4)ceramics have become the most potential insulating heat dissipation substrate materials due to its excellent mechanical properties and high thermal conductivity.In recent years,researchers have made a series of breakthroughs in the preparation of high strength and high thermal conductivity Si_(3)N_(4)ceramics by screening effective sintering additive systems and optimizing the sintering processes.Meanwhile,as the advancement of the engineering application of coppered Si_(3)N_(4)ceramic substrate,the evaluation of its mechanical,thermal,and electrical properties has become a research hotspot.Starting from the factors affecting thermal conductivity of Si_(3)N_(4)ceramics,this article reviews the domestic and international research work focused on sintering aids selection and sintering processes improvement to enhance the thermal conductivity of Si_(3)N_(4)ceramics.In addition,the latest progress in the dielectric breakdown strength of Si_(3)N_(4)ceramic substrates and the evaluation of properties after being coppered are also systematically summarized and introduced.Based on above progresses and faced challengies,the future development direction of high strength and high thermal conductivity Si_(3)N_(4)ceramic substrates is prospected.

关 键 词：氮化硅 热导率 力学性能 烧结助剂 烧结工艺 综述 

分 类 号：TQ174[化学工程—陶瓷工业]