第三代半导体晶体激光诱导改质技术  

Laser-induced Modification of Third-generation Semiconductor Crystals

作　　者：张彩云 胡北辰 李琳 陈洪 ZHANG Caiyun;HU Beichen;LI Lin;CHEN Hong(The 2nd Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,太原030024

出　　处：《电子工艺技术》2023年第6期1-3,共3页Electronics Process Technology

基　　金：科研计划项目(JCKY2022210C006);山西省重大专项“揭榜挂帅”项目(202201030201007)。

摘　　要：第三代半导体材料成本居高不下是行业发展痛点。与传统线切割技术相比,激光改质剥离技术具有材料损耗少、加工效率高、晶圆产出多等优势,已成为国际竞相发展的第三代半导体材料加工革命性技术。介绍了第三代半导体晶体激光诱导改质技术的国内外研究现状,重点阐述了改质区裂纹扩展机制研究、像差校正空间整形技术研究和激光诱导改质设备研制方面的内容。The high cost of third-generation semiconductor materials is a pain point for the development of the industry,Compared with traditional wire cutting technology,laser-assisted spalling has shown its advantages of minimal material loss,high processing effi ciency and increased wafer output,thus believed to be a revolutionary technique for third-generation semiconductor material processing.The current research status of laser-induced modification for third-generation semiconductor crystals is introduced,and the research progress in areas such as the crack propagation mechanism in the modified region,aberration correction and spatial shaping,and the development of laser-induced modifi cation equipment are emphasized.

关 键 词：第三代半导体 激光诱导改质 像差校正 

分 类 号：TN3[电子电信—物理电子学]