半导体PVD用200mm口径低温泵性能测试研究  

Performance Test of 200mm Diameter Cryopump for Semiconductor PVD Usage

作　　者：邓家良 曾环 杨杨 冯欣宇 武义锋[1,2] DENG Jia-liang;ZENG Huan;YANG Yang;FENG Xin-yu;WU Yi-feng(The 16th Research Institute of China Electronics Technology Group Corporation,Hefei 230088,China;Vacree Technologies Co.,Ltd.,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第十六研究所,安徽合肥230088 [2]安徽万瑞冷电科技有限公司,安徽合肥230088

出　　处：《真空》2023年第5期75-80,共6页Vacuum

基　　金：国家科技重大专项课题(2014ZX02001-003)。

摘　　要：降温时间、最低工作压力、抽速和抽气容量是低温泵的关键性能参数,本文设计并搭建了综合性能测试平台对200mm口径低温泵ICP200N进行了系统测量和分析。结果表明,ICP200N低温泵降温时间小于90min;无烘烤条件下最低工作压力可达10^(-7)Pa量级,此时主要残留气体成分为H_(2)O和H_(2)。给出了低温泵在PVD实际应用中比较重要的30s恢复容量的测量方法,测得ICP200N低温泵氩气和氮气30s恢复容量分别为820L和590L。设计了一种简易流量校准装置提高了抽速测量精度,测试表明ICP200N低温泵氮气、氩气抽速与国际主流竞品低温泵相当。目前ICP200N低温泵已在国内半导体客户产线PVD装备上获得了批量应用。Cool-down time,base pressure,pumping speed and gas capacity are key parameters of cryopump.In this paper systematic measurements and analysis of 200mm diameter ICP200N cryopump with the designed comprehensive performance test platform were carried out.The results show that the cool-down time of ICP200N cryopump is less than 90 minutes.The base pressure can reach the level of 10^(-7)Pa without baking,and the main residual gas ingredients are water and hydrogen.The testing method of 30s recovery capacity was given,which is very important in the realistic PVD applications.The corresponding capacity for argon and nitrogen is 820L and 590L,respectively.A simple flow calibration device to improve the pumping speed measurement accuracy was also designed,and the test results show that the nitrogen and argon pumping speed of ICP200N cryopump is comparable with that of international mainstream competitor.So far the ICP200N cryopump has been widely used in the PVD equipment of domestic semiconductor production line.

关 键 词：低温泵 降温时间 最低工作压力 抽速 抽气容量 

分 类 号：TB752.53[一般工业技术—真空技术]