基于分立器件并联的高功率密度碳化硅电机控制器研究  

Research on High Power Density Silicon Carbide Motor Controller Based on Parallel Connection of Discrete Devices

作　　者：张少昆[1,2] 孙微 范涛[1,2] 温旭辉[1,2] 张栋[1,2] Zhang Shaokun;Sun Wei;Fan Tao;Wen Xuhui;Zhang Dong(Institute of Electrical Engineering of Chinese Academy of Sciences,Beijing 100190 China;Key Laboratory of Power Electronics and Electric Drive Institute of Electrical Engineering Chinese Academy of Sciences,Beijing 100190 China)

机构地区：[1]中国科学院电工研究所,北京100190 [2]中国科学院电力电子与电气驱动重点实验室,北京100190

出　　处：《电工技术学报》2023年第22期5999-6014,共16页Transactions of China Electrotechnical Society

基　　金：十四五国家重点研发计划资助项目(2022YFB2502800)。

摘　　要：新能源车用的电机控制器通常通过大功率模块来完成,但大功率模块一般成本比较高,体积比较大,资源也有限。该文基于SiC MOSFET分立器件并联设计了一种高功率密度电机控制器,为了从电气和散热角度最大程度地提升材料和空间利用率,实现高功率密度以及分立器件的良好动静态均流,设计了一种新型的电子系统结构,并提出了一种能动态平衡并联MOSFET电流的高抗扰驱动电路以及可实现低寄生电感、大电流以及高散热的适合分立器件并联应用的新型印制电路板(PCB)叠层母排设计方法。提出的电路及方法既有利于实现并联器件的动静态均流,又可以减小寄生电感造成的影响,还可以有效抑制负向串扰电压。对基于上述研究成果开发出的碳化硅电机控制器,经过双脉冲及功率实验,结果表明,设计的分立器件并联控制器并联均流效果好、散热好、功率密度高,在风冷的条件下,实现了效率最高为99.5%,功率密度为60 kW/L,可应用到新能源整车系统中。The motor controllers for new energy vehicles are generally realized by high-power modules,but the high-power module is high cost,large volume,and limited in resources.This paper proposes a high-power density motor controller based on the parallel design of SiC MOSFET discrete devices,which maximizes material and space utilization from the perspectives of electrical and heat dissipation.In order to achieve high power density,three circular circuit boards with a minimum diameter of only 72 mm,consisting of an upper and lower three-layer structure,were used to design the control circuit,driving circuit,and power circuit.The system has a circular structure and uses the Kelvin source of SiC MOSFET to separate the power and drive circuits.The power circuit uses the power source located on the power board,and the drive circuit uses the Kelvin source located on the drive board.It can prevent the interference of the high-voltage side transient signal on the grid voltage feedback and reduce the dynamic loss,allowing for a symmetrical layout of the parallel tube power circuit to the drive circuit.In the circuit design,taking into account the area,power,heat dissipation,and other factors,the method of using magnetic components to balance the impedance characteristics of the circuit is selected to realize parallel current sharing.A high anti-interference driving circuit is proposed to dynamically equilibrium the current of parallel MOSFETs.A calculated impedance ferrite magnetic bead is connected in series behind the on and off resistors of each SiC MOSFET tube,ensuring that the parallel equivalent impedance is the same while suppressing ringing caused by rapid switching in the SiC MOSFET gate circuit.In addition,the series connection of source resistance and ferrite bead is added to the Kelvin source pole,which can further synchronize the gate signal and realize current sharing.The anti-crosstalk circuit designed using source resistance achieves dual use of one resistor,enhancing the circuit's anti-interference performance.

关 键 词：SiC MOSFET 分立器件并联 高功率密度 印制电路板(PCB)叠层母排 

分 类 号：TM614[电气工程—电力系统及自动化]