晶体硅表面形貌对钝化接触电池的影响  

Influence of surface morphology of crystalline silicon on tunnel oxide passivated contact solar cells

作　　者：张婷 刘大伟 杨露 魏凯峰 倪玉凤 ZHANG Ting;LIU Dawei;YANG Lu;WEI Kaifeng;NI Yufeng(Xi'an Solar power Branch of Qinghai Huanghe Hydropower Development Co.,Ltd.,Xi'an Shaanxi 710000,China)

机构地区：[1]青海黄河上游水电开发有限责任公司西安太阳能电力分公司,陕西西安710000

出　　处：《电源技术》2023年第11期1490-1494,共5页Chinese Journal of Power Sources

摘　　要：硅片基底形貌是影响太阳电池薄膜沉积和钝化质量的因素之一。以TOPCon电池结构为基础,采用三种不同溶液腐蚀制备了三种不同的硅背表面形貌,结合形貌、反射率、磷杂质掺杂分布、表面钝化结果测试及电池效率和金属接触电阻测试等表征方法分析,发现所制备的电池背表面若粗糙,其背表面陷光性好、金属接触电阻低但钝化质量相对差。而用3.6%(质量分数)KOH溶液、具有消泡和缓蚀作用的添加剂(体积分数)1%,65℃,腐蚀180~300 s制备的电池背表面光滑平坦,虽陷光性差、金属接触电阻高,但其钝化效果却非常高。通过优化金属栅线设计降低金属接触电阻后制备的背面抛光电池光电转换效率和外量子响应均最佳。The morphology of silicon substrate is one of the factors that affect the quality of solar cell film deposition and passivation.Based on TOPCon(tunnel oxide passivated contact)structure three different back surface morphologies were prepared by several solution etching methods,and test morphology,reflectivity,phosphorus doping distribution,surface passivation value,the efficiencies and metal contact resistance at al characterization method.It was found that the rough silicon surface had good light trapping and low metal contact resistance,the passivation quality was not good.However,the polished surface similar with the mirro by KOH solution etching,with 3.6%KOH solution,additive 1%,65℃,corroded 180-300 s,was very flat.And the flat morphology had the poor back light trapping,the high metal contact resistance,but very high passivation effect.The photoelectric conversion efficiency and external quantum response of the backpolished cell prepared by optimizing the metal grid design and reducing the metal contact resistance were the best.

关 键 词：钝化接触电池 表面形貌 表面钝化 金属接触 

分 类 号：TM914[电气工程—电力电子与电力传动]