cBN基台面结构pin紫外光电探测器建模与性能  

Performance and Modeling of pin UV Photodetector with cBN-Based Mesa Structure

作　　者：王进军[1] 杨嘉伦 刘宇[1] 李梓腾 段玉博 Wang Jinjun;Yang Jialun;Liu Yu;Li Ziteng;Duan Yubo(School of Electronic Information and Artificial Intelligence,Shaanxi University of Science&Technology,Xi'an 710021,Shaanxi,China)

机构地区：[1]陕西科技大学电子信息与人工智能学院,陕西西安710021

出　　处：《光学学报》2023年第20期10-19,共10页Acta Optica Sinica

基　　金：西安市未央区科技计划项目(201705)。

摘　　要：采用Silvaco TCAD软件构建了立方氮化硼(cBN)基台面结构pin型光电探测器数值计算模型,采用控制变量法研究了n型、i型、p型cBN层材料掺杂浓度、厚度对探测器光电性能的影响,并利用器件物理相关理论对结果进行了分析与讨论。结果表明:p型cBN层掺杂浓度增大时,光电流、暗电流和内量子效率先增大后减小;i型层掺杂浓度增大时,暗电流减小;n型层掺杂浓度增大,光电流、内量子效率增加;光电流和内量子效率随着p层厚度的增大而减小,随着i层厚度的增加而增大;n层厚度越大,光电流越大。Objective In recent years,there have been many studies on the preparation of high-quality hexagonal boron nitride(hBN)materials and the application of hBN ultraviolet(UV)photodetectors.Cubic boron nitride(cBN)has a higher band gap compared with hBN[cBN:(6.4±0.5)eV,hBN:(5.9±1.0)eV],and a higher hardness and melting point,which makes cBN-based UV photodetectors more advantageous.However,on one hand,due to a large number of spontaneous defects inside cBN and the non-uniform process,which result in poor doping efficiency of the prepared devices;on the other hand,different doped impurities exhibit different optical and electrical properties,both making the poor performance of the detectors.Additionally,different photodetector structures such as pin,APD,and heterostructure can also bring about performance differences.Silvaco TCAD software is based on a series of physical models and physical equations that rely on well-established solid-state and semiconductor physics theories or on some empirical formulas to accurately predict the electrical,thermal,and optical results of semiconductor devices.Meanwhile,mesa pin photodetectors feature low dark current and high internal quantum efficiency.Therefore,a numerical model of cBN-based mesa structured pin photodetector is built by Silvaco TCAD software,and the effects of different doping concentrations and thicknesses of the cBN layer on photocurrent,dark current,and internal quantum efficiency of this model are calculated.Methods The numerical calculation model of cBN-based mesa-structured pin is built by Silvaco TCAD software(Fig.2).As the intrinsic layer is n-type by default in the undoped case,it is replaced by a n-type cBN with a doping concentration of 1×1015 cm-3 and a thickness of 0.6μm,and p-type and n-type background carrier concentrations are set as 1×1014 cm-3 and 1×1019 cm-3 with thicknesses of 0.1μm and 2.0μm respectively.Based on the constant low-field mobility model(conmob),parallel electric field-dependent mobility model(fldmob),Auger recombination,Sho

关 键 词：探测器 CBN 光电流 暗电流 内量子效率 

分 类 号：TN364.2[电子电信—物理电子学]