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作 者:宋雨心 李玉琦 王凌寒 张晓兰 王冲 王钦生 Song Yu-Xin;Li Yu-Qi;Wang Ling-Han;Zhang Xiao-Lan;Wang Chong;Wang Qin-Sheng(Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(Ministry of Education),Center for Quantum Physics,School of Physics,Beijing Institute of Technology,Beijing 100081,China)
机构地区:[1]北京理工大学物理学院,量子物理实验中心,先进光电量子结构设计与测量教育部重点实验室,北京100081
出 处:《物理学报》2023年第22期26-36,共11页Acta Physica Sinica
基 金:国家重点研发计划(批准号:2020YFA0308800,2022YFA1206600);国家自然科学基金(批准号:12074036);北京市自然科学基金(批准号:Z190006)资助的课题。
摘 要:过渡金属硫族化合物由于其具有独特的结构和性质,在光电子学、纳米电子学、储能器件、电催化等领域具有广泛的应用前景,是一类被持续关注的代表性二维层状材料.在材料应用过程中,对材料掺杂特性的调控会极大地改变器件的响应性能.因而,对利用掺杂手段调控过渡金属硫族化合物器件响应性能的研究具有重要的意义.电化学离子插层方法的发展为二维材料的掺杂调控提供了新的手段.本文以WS_(2)为例,采用电化学离子插层方法对厚层WS_(2)的掺杂特性进行优化,观察到离子插入后器件电导率的显著增强(约200倍),以及栅压对器件光电响应性能的有效且可逆的调控.本文通过栅压控制离子插层的方法实现对WS_(2)器件光电响应的可逆可循环调节,为利用离子插层方法调控二维材料光电器件响应性能研究提供了实验基础.Transition metal dichalcogenides have emerged as a prominent class of two-dimensional layered material,capturing sustained attention from researchers due to their unique structures and properties.These distinctive characteristics render transition metal dichalcogenides highly versatile in numerous fields,including achievement of efficient and reversible control over the photoelectric response performance is effectively and reversibly controlled by manipulating the gate voltage.One of the key findings in this work is the successful demonstration of the reversible cyclic control of the photoelectric response in WS_(2) devices through ion intercalation,regulated by the gate voltage.This dynamic control mechanism showcases the potential for finely tuning and tailoring the performance of photoelectric devices made from two-dimensional materials.The ability to achieve reversible control is especially significant as it allows for a versatile range of applications,enabling devices to be adjusted according to specific requirements and operating conditions.The implications of this work extend beyond the immediate findings and present a foundation for future investigation into response control of photoelectric devices constructed by using two-dimensional materials through the utilization of the ion intercalation method.By establishing the feasibility and efficacy of this technique in achieving controlled doping and precise modulation of photoelectric response,researchers can explore its potential applications in various technological domains.Furthermore,this research serves as a stepping stone for developing the advanced doping strategies,enabling the design and fabrication of high-performance devices with enhanced functionalities.In summary,this work showcases the significance of doping control in transition metal dichalcogenide devices and demonstrates the potential of the electrochemical ion intercalation method for achieving precise modulation of their photoelectric response performance.The observed enhancements in elec
分 类 号:TN15[电子电信—物理电子学]
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