单模带间级联激光器(特邀)  

Single-mode Interband Cascade Lasers(Invited)

作　　者：刘舒曼[1,2] 张锦川 叶小玲[1,2] 刘俊岐 王利军[1,2] 卓宁 翟慎强[1,2] 李远 刘峰奇[1,2] LIU Shuman;ZHANG Jinchuan;YE Xiaoling;LIU Junqi;WANG Lijun;ZHUO Ning;ZHAI Shenqiang;LI Yuan;LIU Fengqi(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Opto-Electronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [2]中国科学院大学材料与光电研究中心,北京100049

出　　处：《光子学报》2023年第10期30-49,共20页Acta Photonica Sinica

基　　金：国家自然科学基金(No.62235016);北京市科技计划(No.Z221100002722018);中国科学院战略性先导专项(No.XDB43000000)。

摘　　要：基于锑化物的带间级联激光器同时具有带间跃迁的高增益和级联结构的高量子效率,是中红外波段重要的相干光源,其功耗低于其它中红外半导体激光器,因而单模带间级联激光器在基于激光吸收光谱技术的高分辨气体检测和化学传感等领域具有很大的优势。目前利用Bragg光栅实现波长选择的单模分布反馈带间级联激光器已经实现商品化,但是,与同样有源区结构的Fabry-Pérot腔带间级联激光器最高600 mW的出光功率相比,单模功率最高55 mW,损耗较大。对几种不同结构的分布反馈带间级联激光器的性能进行对比分析,探讨这类单模中红外激光器损耗的主要来源以及改进思路。此外,介绍了垂直腔面发射和光子晶体带间级联激光器的进展,并与分布反馈带间级联激光器的性能进行比较,讨论其优缺点及适用的场景。Interband Cascade Laser(ICL)and Quantum Cascade Laser(QCL)are currently the mainstream mid-infrared semiconductor coherent light sources.Among them,QCL has the advantage of watt-level high power in the spectral band above 4μm,and the power consumption is usually high.ICLs are characterized by low power consumption and operate in the 3~5μm spectral band.This band contains a wealth of molecular fundamental modes,such as alkane molecules,which are important in the petrochemical industry,SO2 and formaldehyde,which are closely related to environmental pollution,as well as NO and H2S,which are biomarkers in the medical and health fields.At present,most of the highsensitivity optical sensing systems based on mid-infrared laser absorption spectroscopy technology ranging from 10^(−6) to 10^(−9) use single-mode ICLs with low power consumption as the coherent light sources.It is known that one-dimensional Distributed Feedback(DFB)gratings buried near the active region are most commonly used in mode selection for InP-based semiconductor lasers thanks to the mature InP regrowth technology.However,it is hard to regrow the antimonide superlattice waveguide structure of an ICL on a grating layer,which makes the buried grating structure impossible for a DFB ICL.Even for the simplest surface gratings,since an ICL epitaxial structure is usually capped with a thin lattice mismatched InAs layer,the surface grating can only be etched in the InAs/AlSb superlattice waveguide layer.The etching rate of InAs and AlSb is different,resulting in non-smooth grating side walls.As a result,several grating schemes have been reported so far.For example,a high refractive index Ge layer was deposited on the surface of the ICL structure to avoid etching the grating in the superlattice waveguide,where a 1st DFB grating was fabricated by electron-beam lithography and lift-off.In such a process,it should be noted that the Ge layer is relatively easy to fall off.In contrast to the non-crystalline Ge layer,another surface DFB grating ICL was reporte

关 键 词：中红外 单模 带间级联激光器 分布反馈 面发射激光器 

分 类 号：TN248.4[电子电信—物理电子学]