VGF法中降温速率对InP单晶生长的影响  

Effect of Cooling Rate on InP Single Crystal Growth by VGF Method

作　　者：赵兴凯 叶晓达 李世强 韦华 赵茂旭 杨春柳 孙清 Zhao Xingkai;Ye Xiaoda;Li Shiqiang;Wei Hua;Zhao Maoxu;Yang Chunliu;Sun Qing(Yunnan Xinyao Semiconductor Materials Co.,Ltd.,Kunming 650503,China)

机构地区：[1]云南鑫耀半导体材料有限公司,昆明650503

出　　处：《半导体技术》2023年第11期985-990,1019,共7页Semiconductor Technology

基　　金：云南省重大科技专项计划省市一体化专项(202202AH080009)。

摘　　要：垂直梯度凝固(VGF)法生长磷化铟(InP)单晶时产生的缺陷主要有孪晶、位错、多晶等,这些缺陷严重影响了InP单晶的产量与品质。首先简述了VGF法生长InP单晶过程中容易产生的主要缺陷,然后通过实验对各生长阶段的降温速率进行调整,成功改善了孪晶、位错重复出现的情况。实验结果表明,增大放肩过程的降温速率有利于抑制放肩过程产生的内切孪晶,但容易增加晶体肩部的位错密度,至等径部位发生位错增殖。为解决此问题,实验在增加放肩降温速率的同时,适当减小了等径降温速率,从而有效抑制了等径部位的位错增殖。最终,实验中生长出了平均位错密度低于50 cm-2的高质量掺S InP单晶。The defects generated during the growth of InP single crystals by vertical gradient freeze(VGF)method mainly include twins,dislocations,polycrystals,etc.,which seriously affect the yield and quality of InP single crystals.Firstly,the main defects prone to occur during the growth of InP single crystals by VGF method were briefly described,and then the cooling rate at different growth stages was adjusted through experiments to successfully decrease the repeated occurrence of twins and dislocations.The experiment results show that increasing the cooling rate during shouldering process is beneficial for suppressing the generation of inscribed twins.However,it is easy to increase the dislocation density of the shoulder part crystal,and the dislocation will multiply after extending to the equal-diameter part.To resolve this problem,while increasing the cooling rate during shouldering process,the cooling rate during equal-diameter growth was reduced,thus effectively suppressing the dislocation multiplication in equal-diameter part.Ultimately,high quality S-doped InP single crystals with average dislocation densities below 50 cm-²were grown in the experiment.

关 键 词：磷化铟 垂直梯度凝固(VGF)法 降温速率 孪晶 位错 缺陷 

分 类 号：TN304.23[电子电信—物理电子学] TN304.053