脉冲体制下GaAs功率放大器的电压过冲研究  

Research on voltage overshoot of GaAs power amplifier in pulse system

作　　者：陆淼[1] 陈皓 徐一鸣 Lu Miao;Chen Hao;Xu Yiming(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子技术应用》2023年第11期126-128,共3页Application of Electronic Technique

摘　　要：由于GaAs功率放大器输出功率较高,通常以脉冲体制应用于雷达系统及其他通信系统中。根据GaAs功率放大器的材料特性及国内现有工艺水平可知,其击穿场强较低,当GaAs功率放大器工作在漏极电源脉冲调制下,微波信号突然消失时,GaAs功率放大器的工作电流发生突变,则会形成电压过冲。当过冲电压较高时,容易击穿GaAs功率放大器。首先阐明了电压过冲的产生机理,通过理论分析,提出了几种改善电压过冲的措施,并在GaAs功率放大器中经过实测,将电压过冲从13.9 V降低到12.9 V,验证了其有效性。Due to the high output power of GaAs power amplifier,it is usually used in radar system and other communication systems with pulse system.According to the characteristics of GaAs power amplifier material,its breakdown field strength is low,and under the drain pulse modulation,when the pulse disappears,the current mutation will form voltage overshoot.When the overshoot voltage is high,it is easy to break down the amplifier.In this paper,the generation mechanism of voltage overshoot is introduced,and several measures to improve voltage overshoot are put through theoretical analysis,and the effectiveness of which is verified by actual measurement in GaAs power amplifier.

关 键 词：雷达 功率放大器 脉冲 电压过冲 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75