多晶硅棍状(Stick Particle)缺陷的分析与优化  

Analysis and Optimization of Stick Particle Defects in Polycrystalline Silicon

作　　者：胡伟玲 HU Weiling(Shanghai Huali Integrated Circuit Manufacturing Co.,Ltd.,Shanghai 201203,China)

机构地区：[1]上海华力集成电路制造有限公司,上海201203

出　　处：《集成电路应用》2023年第9期38-40,共3页Application of IC

摘　　要：阐述HK制程多晶硅P1HM步骤后的棍状(stick particle)的缺陷。因腔体作业所需条件,整个腔体侧壁与底部静电吸盘上都附着SICL4+O2生成的SIO2的coating材料,刻蚀过程中可能会有聚合物(polymer)掉落或静电吸盘吸附的晶圆背面掉落到下片导致的棍状缺陷,导致在P1LEC步骤刻蚀变为阻挡层刻蚀,P1LEC后变为Poly Block ETCH。探讨针对stick PA的解决方案。This paper describes the stick particle defects after the HK process polycrystalline silicon P1HM step.Due to the required conditions for cavity operation,the coating material of SIO2 generated by SICL4+O2 is attached to the side walls and bottom electrostatic suction cups of the entire cavity.During the etching process,there may be rod-shaped defects caused by polymer falling or the backside of the wafer adsorbed by the electrostatic suction cup falling onto the lower wafer,leading to barrier layer etching in the P1LEC step and Poly Block ETCH after P1LEC.It explores solutions for stick PA.

关 键 词：射频轰击 棍状缺陷 静电吸盘 coating材料 De-chuck 

分 类 号：TN405[电子电信—微电子学与固体电子学]