基于Keithley 4200A-SCS的存储器量子效应教学实验设计  

Design of Teaching Experiment for Study on Quantum Effects of Memory Device by Using Keithley 4200A-SCS

作　　者：连晓娟 王磊[1] LIAN Xiaojuan;WANG Lei(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Jiangsu 210031,China)

机构地区：[1]南京邮电大学集成电路科学与工程学院(产教融合学院),江苏210031

出　　处：《集成电路应用》2023年第10期22-25,共4页Application of IC

基　　金：国家自然科学基金(61804079,61964012);射频集成与微组装技术国家地方联合工程实验室开放课题(KFJJ20200102)。

摘　　要：阐述基于Keithley 4200A-SCS半导体参数分析仪的探究性实验的设计,包括样品的准备、Keithley 4200A-SCS电学特性测试、结果分析与讨论,根据电学测试结果与半导体量子器件的物理知识,定量给出了存储器中的工作电流与电压的关系。该实验有助于加深学生对RRAM工作机制的理解,锻炼学生的实践水平和探索能力。This paper expounds the design of an exploratory experiment based on Keithley 4200A-SCS semiconductor parameter analyzer,including the sample preparation,Keithley 4200A-SCS electrical test,results and discussion.Further,according to the electrical test results and the physics knowledge of semiconductor quantum devices,the relationship between the working current and voltage in the RRAM device is given quantitatively.This experiment is helpful for student to understand the working mechanism of RRAM device,improve their practical level and exploration ability.

关 键 词：阻变式存储器 量子效应 Keithley 4200A-SCS 探索性实验 

分 类 号：TN40-4[电子电信—微电子学与固体电子学] TN60[自动化与计算机技术—计算机系统结构] TP333[自动化与计算机技术—计算机科学与技术]