GaAs插入层对InGaAs/AlGaAs量子阱发光性质的影响  

Effect of GaAs Insertion Layer on Luminescence Properties of InGaAs/AlGaAs Quantum Wells

作　　者：于海鑫 王海珠 郎天宇 吕明辉 徐睿良 范杰 邹永刚 YU Haixin;WANG Haizhu;LANG Tianyu;LYU Minghui;XU Ruiliang;FAN Jie;ZOU Yonggang(Research Institute of Chongqing,Changchun University of Science and Technology,Chongqing 401135,China;State Key Laboratory of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学重庆研究院,重庆401135 [2]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《发光学报》2023年第11期1967-1973,共7页Chinese Journal of Luminescence

基　　金：吉林省科技发展计划(20210201089GX);吉林省教育厅科学技术研究项目(JJKH20220769KJ);重庆市自然科学基金项目(cstc2021jcyj-msxmX1060)。

摘　　要：InGaAs/AlGaAs多量子阱(MQWs)作为一种常见的Ⅲ-Ⅴ族外延材料,通常应用于半导体激光器和太阳能电池等领域。然而,由于量子阱的势阱层和势垒层生长温度不同,铟原子的偏析和多量子阱生长质量较差等问题尚未得到很好的解决。本文设计了一种砷化镓(GaAs)材料作为插入层(ISL),并用于InGaAs/AlGaAs MQWs的结构。PL、XRD、AFM测试表明,GaAs插入层保证了MQWs结构中更多的辐射复合,阻止了铟原子的偏析。但GaAs插入层的引入也会产生“局域态”,影响量子阱的发光性质。本研究可以加深对InGaAs/AlGaAs多量子阱辐射复合机制的理解,并且对引入GaAs插入层的InGaAs/AlGaAs多量子阱发光性质的研究具有重要意义。As a common groupⅢ-Ⅴepitaxial material,InGaAs/AlGaAs multi-quantum wells(MQWs)are com⁃monly used in the fields of semiconductor lasers and solar cells.However,the segregation of indium atoms and the poor growth quality of MQWs have not been well resolved due to the growth temperature differences between the well layer and barrier layer of quantum wells.In this paper,a gallium arsenide(GaAs)material is designed as an inser⁃tion layer(ISL)to be used in the structure of InGaAs/AlGaAs MQWs.PL and XRD,AFM tests show that the GaAs ISL guarantees more radiation recombination in the MQWs structure,preventing segregation of indium atoms.How⁃ever,the introduction of GaAs ISL will induce“local states”,which will affect the luminescence properties of quan⁃tum wells.This study not only can deepen the understanding of the radiation recombination mechanism of InGaAs/Al⁃GaAs multi-quantum wells,but also has great significance in the luminescence properties study of InGaAs/AlGaAs MQWs with GaAs ISL.

关 键 词：InGaAs/AlGaAs多量子阱 局域态 插入层 金属有机化合物气相外延(MOCVD) 

分 类 号：TN304.2[电子电信—物理电子学]