微结构硅基光电二极管的近红外响应特性研究  

Near-Infrared Response Characteristics of Microstructured Silicon-Based Photodiodes

作　　者：罗海燕[1,2] 李世彬 王文武 LUO Haiyan;LI Shibin;WANG Wenwu(Institute of Microelectronics,Chinese Academy of Sciences,Chaoyang Beijing100029;School of Integrated Circuits,University of Chinese Academy of Sciences,Huairou Beijing100049;School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054)

机构地区：[1]中国科学院微电子研究所集成电路先导研发中心,北京朝阳区100029 [2]中国科学院大学集成电路学院,北京怀柔区100049 [3]电子科技大学光电科学与工程学院,成都610054

出　　处：《电子科技大学学报》2023年第6期830-834,共5页Journal of University of Electronic Science and Technology of China

摘　　要：宽带隙红外光谱响应由于其在硅基光电探测器中的潜在应用而受到了广泛关注。利用离子注入和飞秒脉冲激光制备了一系列掺杂硅基光电二极管,并研究了硫掺杂硅基材料及器件后的宽带隙红外光谱响应特性。结果发现,PN型光电二极管在近红外和中红外光谱区域内表现出几个典型的光响应特征峰值。这几个特征峰对应于不同的子带隙光响应特征的起始能量,与硅带隙内掺杂硫的活性能级一致。这种光谱响应拓宽技术为制造低成本宽带隙硅光电探测器提供了有力的参考方案。Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors.In this paper,we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser.And the photoresponse spectral in near and mid-infrared region of electromagnetic spectrum of fabricated highly-doped silicon photodiodes were studied.These devices showed a remarkable photoresponse peak at near-infrared response(NIR)wavelengths.The distinct sub-band gap photoresponse features corresponding to the onset energies are consistent with the active energy levels of known sulfur within the silicon band-gap.The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance.This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.

关 键 词：飞秒脉冲激光 离子注入 近红外光谱 光电二极管 

分 类 号：TN2[电子电信—物理电子学]