在片电容测量系统溯源及测量方法研究  

Traceability and Measurement Method for On-wafer Capacitance Test System

作　　者：丁晨[1] 乔玉娥[1] 刘岩[1] 翟玉卫[1] 吴爱华[1] DING Chen;QIAO Yu-e;LIU Yan;ZHAI Yu-wei;WU Ai-hua(The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang,Hebei 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《计量学报》2023年第11期1735-1739,共5页Acta Metrologica Sinica

摘　　要：针对在片电容参数溯源及测量不准确问题,提出一种溯源及测量方法,通过在片形式的直通线将测量结果与成熟的四端对标准电容器的量值联系起来,实现了在片电容参数的溯源。通过定量研究干扰回路对测量结果的影响,对探针系统及测量线缆的影响进行修正,准确测量在片电容值,使得测量数据的准确性可验证,计量级在片电容测量系统测量准确度提高0.08%。A traceability and measurement method was proposed in order to solve the problem that the capacitance parameter of on-wafer traceability and inaccurate measurement.The measurement results were connected with the four-terminal par capacitor standard by the on chip straight line to realize the traceability.Adopting the quantitative research of interference loop,corrected the influence of the probe system and cable,and accurated measurement of on wafer capacitance.The measurement accuracy of the metering level's test system improved 0.08%by this method.

关 键 词：计量学 在片电容参数 在片直通线 四端对标准电容器 干扰回路 溯源 

分 类 号：TB973[一般工业技术—计量学]