Monolithic full-color active-matrix micro-LED microdisplay using InGaN/AlGaInP heterogeneous integration  

作　　者：Longheng Qi Peian Li Xu Zhang Ka Ming Wong Kei May Lau 

机构地区：[1]Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Clear Water Bay,Kowloon,Hong Kong,China

出　　处：《Light(Science & Applications)》2023年第11期2459-2467,共9页光（科学与应用)（英文版）

基　　金：Innovation and Technology Fund(ITS/120/20).The authors would like to thank the NFF and Epack of HKUST for technical support.The authors would also like to thank the LED buffers provided by Enkris Inc.

摘　　要：A prototype of full-color active-matrix micro-light-emitting diode(micro-LED)micro-display with a pixel density of 391 pixel per inch(ppi)using InGaN/AlGaInP heterogeneous integration is demonstrated.InGaN blue/green dual-color micro-LED arrays realized on a single metal organic chemical vapor deposition(MOCVD)-grown GaN-on-Si epiwafer and AlGaInP red micro-LED arrays are both monolithically fabricated,followed by the integration with a common complementary metal oxide semiconductor(CMOS)backplane via flip-chip bonding technology to form a doublelayer thin-film display structure.Full-color images with decent color gamut and brightness are successfully displayed through the fine adjustment of driving current densities of RGB subpixels.This full-color display combines the advantages of high quantum efficiency of InGaN material on blue/green light and AlGaInP material on red light through heterogeneous integration and high pixel density through monolithic fabrication approach,demonstrating the feasibility and prospects of high brightness,good color performance,and high-resolution micro-LED microdisplays in future metaverse applications.

关 键 词：ALGAINP integration MATRIX 

分 类 号：TN36[电子电信—物理电子学]