InGaAs阱簇复合结构中铟原子自适应迁移的临界厚度  

Critical Thickness of Indium Atom Self-Fitting Migration in InGaAs Well-Cluster Composite Structure

作　　者：于庆南 刘子键 王新宇 李可 王茹 刘新雨 潘玉 李晖 张建伟[2] Yu Qingnan;Liu Zijian;Wang Xinyu;Li Ke;Wang Ru;Liu Xinyu;Pan Yu;Li Hui;Zhang Jianwei(Jiangsu Province Engineering Research Center of Integrated Circuit Reliability Technology and Testing System,Wuxi University,Wuxi 214105,Jiangsu,China;Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,Jilin,China)

机构地区：[1]无锡学院江苏省集成电路可靠性技术及检测系统工程研究中心,江苏无锡214105 [2]中国科学院长春光学精密机械与物理研究所,吉林长春130033

出　　处：《光学学报》2023年第21期174-179,共6页Acta Optica Sinica

基　　金：国家自然科学基金(62204172);江苏省高等学校基础科学(自然科学)研究项目(22KJB140016);江苏省双创博士项目(JSSCBS20210870,JSSCBS20210868);南京信息工程大学滨江学院人才启动经费(550221009,550221036)。

摘　　要：为了探究铟原子发生自适应迁移的临界厚度,首先测量得到InGaAs阱簇复合结构表面不同位置的自发辐射光谱。铟原子的自适应迁移会导致阱簇复合结构中同时产生铟含量正常的和损失的In_(x)Ga_(1-x)As区域,进而导致其自发辐射光谱具有特殊的双峰特征。通过对比光谱的双峰强度,计算并评估了正常In_(0.17)Ga_(0.83)As层的厚度起伏为4.6~6.4 nm,即铟原子发生自适应迁移的临界厚度为4.6 nm。通过对比4 nm传统InGaAs量子阱的单峰光谱特征,验证了铟原子发生自适应迁移临界厚度的准确性,该项研究对推动InGaAs阱簇复合量子限制结构的发展具有重要意义。Objective In recent years,a novel InGaAs well-cluster composite(WCC)quantum-confined structure has been demonstrated that the special structure has excellent optical properties,which are important for the realization of ultra-wide tunable lasers and synchronous dual-wavelength lasers.The WCC structure is based on the self-fit migration of indium atoms caused by the indium-rich cluster(IRC)effect,which are typically regarded as defects to be avoided for the conventional InGaAs quantum-well structure.Therefore,its special optical characteristics remain neglected.The formation mechanism of this WCC structure is based on the migration of indium atoms under high strain background.The strain will gradually accumulate with the continuous deposition of InGaAs material thickness.In order to relax the high strain in the InGaAs layer,indium atoms would automatically migrate along the material growth direction and form IRCs after the InxGa1−xAs is grown to exceed the critical thickness on the GaAs.Therefore,how to effectively determine the critical thickness of indium atom migration is of great significance for the study of WCC structures.However,there is little research on the critical thickness of the WCC structure.The traditional measurement methods on quantum well thickness make it difficult to obtain the thickness fluctuations at different positions.Furthermore,it is not possible to accurately evaluate the critical thickness of indium atom migration in the asymmetric In_(x)Ga_(1-x)As WCC structure.Therefore,the critical thickness of indium atom migration is investigated by collecting spontaneous emission(SE)spectra from different positions in the WCC structure.Methods First,in order to study the critical thickness of indium atom self-fit migration in the IRC effect,an asymmetrical InGaAs WCC quantum confinement structure is grown on a GaAs substrate.Because IRCs generally occur in highly strained InGaAs/GaAs systems,the active layer used In_(0.17)Ga_(0.83)As/GaAs/GaAs_(0.92)P_(0.08).The thickness of the In_(0.17)Ga_(0

关 键 词：激光器 INGAAS/GAAS 富铟团簇 双峰光谱 临界厚度 

分 类 号：O432[机械工程—光学工程]