紧凑型宽带低损耗3 dB功率分配器设计与制备  

Design and Preparation of Broadband 3 dB Power Splitter with Compact Size and Low Loss

作　　者：周彦汝 尹程玉 刘文耀 邢恩博 唐军[2] 刘俊 Zhou Yanru;Yin Chengyu;Liu Wenyao;Xing Enbo;Tang Jun;Liu Jun(School of Information and Communication Engineering,North University of China,Taiyuan 030051,Shanxi,China;School of Semiconductor and Physics,North University of China,Taiyuan 030051,Shanxi,China;School of Instrument and Electronics,North University of China,Taiyuan 030051,Shanxi,China)

机构地区：[1]中北大学信息与通信工程学院,山西太原030051 [2]中北大学半导体与物理学院,山西太原030051 [3]中北大学仪器与电子学院,山西太原030051

出　　处：《光学学报》2023年第22期230-237,共8页Acta Optica Sinica

基　　金：山西省基础研究计划(202203021212156);量子传感与精密测量山西省重点实验室开放基金资助(201905D121001002)。

摘　　要：光功率分配器作为光子集成电路中分束并束的关键器件,要求结构紧凑、宽带、低损耗。基于亚波长光栅(SWG)结构,提出一种分束区域长5μm、分光比为50∶50的超大带宽低损耗3 dB光功率分配器。仿真结果表明,该光功率分配器在±15 nm的大工艺容差下,TE模式在1.26~2.02μm波段内(即760 nm带宽)损耗低于0.54 dB。通过电子束曝光、干法刻蚀等工艺在绝缘体上硅(SOI)晶圆上加工制备该光功率分配器,在扫描电子显微镜(SEM)下观察SWG结构的加工误差不超过±10 nm。此外,搭建垂直耦合测试平台,利用可调谐激光器在1496.8~1600 nm波段,对TE模式的损耗与分光比进行测试。结果表明,该波段损耗约为0.3 dB,与仿真结果吻合,分光比误差在5%以内。该功率分配器适用于高速、大容量通信、波分复用(WDM)系统等互联应用场合。Objective Recently,in optical communications,2μm is expected to be the fourth window in the near-infrared after 850 nm,1310 nm,and 1550 nm.The research on the devices,which could be applied to 1.26-1.675μm and 2μm bands with large broadband and low loss,follows the high-capacity communication development in the future.As part of the photonic integrated circuits(PICs),the optical power splitter is widely employed in high-capacity communication and interconnection scenes.It supports the design of wavelength division multiplexing(WDM)system,modulator,optical switch,and other devices.As a key device for beam splitting and beam merging,the optical power splitter requires compact structure,broadband,and low loss.The power splitter with breakthrough bandwidth will play a cornerstone role in the ultra-broadband systems on chip,which can cover the full communication bandwidth of O-,E-,S-,C-,L-,Ubands(1.26-1.675μm)and 2μm band with low loss.Methods According to the equivalent medium theory(EMT),the refractive index of the dielectric that does not exist in nature can be obtained by designing the subwavelength structure,which brings high flexibility to the PIC design.With the progress in micro-nano fabrication,subwavelength structures are adopted to yield better performance.Many kinds of devices have achieved large bandwidths by introducing subwavelength structures,including polarization beam splitter,polarization rotator,phase shifter,and fiber-chip edge coupler.Inspired by this,we propose a 3 dB power splitter on the silicon-on-insulator(SOI)platform.Subwavelength grating(SWG)structures with adjustable refractive index are introduced to realize large bandwidths.Then the optical power splitter is fabricated on an SOI wafer using electron beam lithography and dry etching processes.Additionally,a vertical coupling test rig is set up to test the loss of the TE mode and the beam splitting ratio in the bands from 1496.8 nm to 1600 nm.Results and Discussions As shown in Fig.1,a novel structure is utilized to replace the trad

关 键 词：紧凑 宽带 低损耗 光功率分配器 

分 类 号：TN256[电子电信—物理电子学]