GaAs和InP化合物半导体的发展趋势及应用  

Development Trends and Applications of GaAs and InP Compound Semiconductors

作　　者：韩家贤 韦华 刘建良 叶晓达 赵兴凯 牛应硕 孙清 李芳艳 王茺[3] 无 Han Jiaxian;Wei Hua;Liu Jianliang;Ye Xiaoda;Zhao Xingkai;Niu Yingshuo;Sun Qing;Li Fangyan;Wang Lian;无(Yunnan Xinyao Semiconductor Materials Co.,Ltd.,Kunming 650503,China;Yunnan Zhongke Xinyuan Crystal Materials Co.,Ltd.,Kunming 65050,China;School of Materials and Energy,Yunnan University,Kunming 650500,China)

机构地区：[1]云南鑫耀半导体材料有限公司,云南昆明650503 [2]云南中科鑫圆晶体材料有限公司,云南昆明65050 [3]云南大学材料与能源学院,云南昆明650500

出　　处：《云南化工》2023年第12期16-20,共5页Yunnan Chemical Technology

摘　　要：第二代半导体材料砷化镓和磷化铟广泛应用于5G通信、数据中心、新一代显示设备、无人驾驶、可穿戴设备、航天等领域,在光电领域的应用日渐成熟,国内上中下游产业布局趋于完善,下游市场规模将快速增长。对GaAs和InP化合物半导体的发展趋势及路线进行了综述。The second generation semiconductor materials gallium arsenide and indium phosphide are widely used in 5G communication,data centers,next-generation display devices,unmanned driving,wearable devices,aerospace,and other fields.Their applications in the optoelectronic field are becoming increasingly mature,and the layout of domestic upstream,midstream,and downstream industries is becoming more perfect.The downstream market size will grow rapidly.This article discusses the development trends and routes of GaAs and InP compound semiconductors.

关 键 词：磷化铟 砷化镓 半导体光电器件 

分 类 号：TN304[电子电信—物理电子学]