1μm波段高功率超辐射发光二极管  

1μm High Power Superluminescent Diodes

作　　者：伏丁阳 高欣 赵仁泽 张悦 苏鹏 薄报学 FU Dingyang;GAO Xin;ZHAO Renze;ZHANG Yue;SU Peng;BO Baoxue(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《发光学报》2023年第12期2231-2241,共11页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61774024);吉林省科技发展计划(20190302007GX,20200501008GS)。

摘　　要：为提高1μm波段超辐射发光二极管的输出特性,对外延结构及J型波导结构参数进行研究,基于研究结果确定外延结构及波导结构参数并对电极窗口制备工艺及单层氧化铪薄膜成膜条件进行了优化。研究表明,缩小波导与限制层AlGaAs材料中Al组分差值利于改善器件光束特性。此外,增加刻蚀深度、脊宽及曲率半径均会使损耗系数减小以提高器件输出功率。基于仿真结果制备出非均匀阱宽大阱深的三量子阱结构器件,前腔面镀制反射率约为0.5%的单层氧化铪薄膜,后腔面蒸镀高反膜,腔长约2 mm,波导曲率半径为21.8 mm,在500 mA连续电流注入下,实现了118.1 mW输出功率和32.5 nm光谱半宽。单层增透膜的设计抑制了器件激射并简化了工艺复杂度,避免了多层增透膜不同材料间的应力问题。In order to improve the output characteristics of 1μm-band superluminescent diodes,this article studies the epitaxial structure and J-type waveguide structure.Based on the research results,the parameters of the epitaxial structure and waveguide structure are determined,and the electrode window preparation process and single-layer hafnium oxide film formation conditions are optimized.The research has shown that reducing the difference in Al composition between the waveguide and the limiting layer AlGaAs material is beneficial for improving the beam characteristics of the device.In addition,increasing the etching depth,ridge width,and curvature radius will reduce the loss coefficient and improve the output power of the device.Based on simulation results,a three quantum well structure device with non-uniform well width and large well depth was prepared.A single-layer hafnium oxide film with a reflectivity of about 0.5%was deposited on the front cavity surface,and a high reflection film was evaporated on the back cavity surface.The cavity length was about 2 mm,and the waveguide curvature radius was 21.8 mm.Under 500 mA continuous current injection,an output power of 118.1 mW and a spectral half width of 32.5 nm were achieved.The horizontal and vertical far-field divergence angles of the device are 13.2°and 21.1°,respectively.In addition,the design of a single-layer anti-reflective film effectively suppresses the lasing of devices with high gain,simplifies process complexity,and avoids stress issues between different materials of the multi-layer anti-reflective film.

关 键 词：超辐射发光二极管 弯曲波导 曲率半径 损耗系数 输出特性 

分 类 号：TN248.4[电子电信—物理电子学]