一种应用于Sub-6G的宽带低功耗低噪声放大器  

Broadband Low-Noise Amplifier with Low Power Consumption for Sub-6G Applications

作　　者：倪城 王毅炜 杨定坤 NI Cheng;WANG Yiwei;YANG Dingkun(School of Information Science and Engineering,Wuhan University of Science and Technology,Wuhan 430081,China;Chengdu CORPRO Technology Co.,Ltd.,Chengdu 610093,China)

机构地区：[1]武汉科技大学信息科学与工程学院,武汉430081 [2]成都振芯科技股份有限公司,成都610093

出　　处：《电子与封装》2023年第12期39-44,共6页Electronics & Packaging

基　　金：湖北省大学生创新创业训练计划项目(D202305092148362688)。

摘　　要：提出了一种工作频率覆盖Sub-6G的宽带低噪声放大器(LNA),该电路采用电阻自偏置AB类放大器级联共源共栅放大器的结构,在实现宽带工作的同时兼具高增益、低功耗的特点。该LNA采用TSMC 40 nm CMOS工艺,在1.3 V工作电压下,增益高于26 dB,噪声系数低于2.6 dB,三阶输入交调截点为-4.6 dBm@6 GHz,1 dB压缩点为3.4 dBm@6 GHz,静态功耗仅为0.94 mW,版图面积为0.014 mm^(2)。A broadband low-noise amplifier(LNA)with operating frequency covering Sub-6G is proposed.The circuit adopts the structure of resistive self-biased class-AB amplifiers cascaded with a common source and common gate amplifier.It has the characteristics of high gain and low power consumption while realizing broadband operation.The LNA is designed with TSMC 40 nm CMOS process.The gain of the LNA is more than 26 dB,the noise figure is below 2.6 dB,the third order input intercept point is-4.6 dBm@6 GHz,the 1 dB compression point is 3.4 dBm@6 GHz,the static power consumption is only 0.94 mW,and the layout area is 0.014 mm^(2)at an operating voltage of 1.3 V.

关 键 词：低噪声放大器 TSMC 40 nm CMOS 宽带 低功耗 

分 类 号：TN402[电子电信—微电子学与固体电子学]