Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications  

作　　者：Chuanpeng Jiang Jinhao Li Hongchao Zhang Shiyang Lu Pengbin Li Chao Wang Zhongkui Zhang Zhengyi Hou Xu Liu Jiagao Feng He Zhang Hui Jin Gefei Wang Hongxi Liu Kaihua Cao Zhaohao Wang Weisheng Zhao 

机构地区：[1]School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China [2]Truth Memory Corporation,Beijing 100088,China

出　　处：《Journal of Semiconductors》2023年第12期81-88,共8页半导体学报（英文版）

基　　金：supported by the National Key Research and Development Program of China (Nos.2021YFB3601303,2021YFB3601304,2021YFB3601300,2022YFB4400200,2022YFB4400201,2022YFB4400203);the National Natural Science Foundation of China (Grant No.62171013)。

摘　　要：We have successfully demonstrated a 1 Kb spin-orbit torque(SOT)magnetic random-access memory(MRAM)multiplexer(MUX)array with remarkable performance.The 1 Kb MUX array exhibits an in-die function yield of over 99.6%.Additionally,it provides a sufficient readout window,with a TMR/RP_sigma%value of 21.4.Moreover,the SOT magnetic tunnel junctions(MTJs)in the array show write error rates as low as 10^(-6)without any ballooning effects or back-hopping behaviors,ensuring the write stability and reliability.This array achieves write operations in 20 ns and 1.2 V for an industrial-level temperature range from-40 to 125℃.Overall,the demonstrated array shows competitive specifications compared to the state-of-the-art works.Our work paves the way for the industrial-scale production of SOT-MRAM,moving this technology beyond R&D and towards widespread adoption.

关 键 词：spin-orbit torque MRAM multiplexer array 200 mm-wafer platform stability reliability 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]