Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM  

作　　者：Zhenzhen Kong Hongxiao Lin Hailing Wang Yanpeng Song Junjie Li Xiaomeng Liu Anyan Du Yuanhao Miao Yiwen Zhang Yuhui Ren Chen Li Jiahan Yu Jinbiao Liu Jingxiong Liu Qinzhu Zhang Jianfeng Gao Huihui Li Xiangsheng Wang Junfeng Li Henry HRadamson Chao Zhao Tianchun Ye Guilei Wang 

机构地区：[1]Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]Beijing Superstring Academy of Memory Technology,Beijing 100176,China [3]Research and Development Center of Optoelectronic Hybrid IC,Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535,China [4]Microelectronics Institute,University of Chinese Academy of Sciences,Beijing 100049,China [5]Hefei National Laboratory,Hefei 230088,China

出　　处：《Journal of Semiconductors》2023年第12期133-140,共8页半导体学报（英文版）

基　　金：supported in part by the Strategic Priority Research Program of the Chinese Academy of Sciences (Project ID.XDA0330300);in part by Innovation Program for Quantum Science and Technology (Project ID.2021ZD0302301);in part by the Youth Innovation Promotion Association of CAS (Project ID.2020037)。

摘　　要：Fifteen periods of Si/Si_(0.7)Ge_(0.3)multilayers(MLs)with various Si Ge thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition(RPCVD).Several methods were utilized to characterize and analyze the ML structures.The high resolution transmission electron microscopy(HRTEM)results show that the ML structure with 20 nm Si_(0.7)Ge_(0.3)features the best crystal quality and no defects are observed.Stacked Si_(0.7)Ge_(0.3)ML structures etched by three different methods were carried out and compared,and the results show that they have different selectivities and morphologies.In this work,the fabrication process influences on Si/Si Ge MLs are studied and there are no significant effects on the Si layers,which are the channels in lateral gate all around field effect transistor(L-GAAFET)devices.For vertically-stacked dynamic random access memory(VS-DRAM),it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical thickness.These results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires,nanosheet L-GAAFETs,and DRAM devices.

关 键 词：RPCVD EPITAXY SiGe/Si multilayers L-GAAFETs VS-DRAM 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]