SiC MOSFET有源驱动电路关断轨迹优化方法  

Optimization method for turn-off trajectory of SiC MOSFET active driving circuit

作　　者：陈月清 郭希铮[1] 部旭聪 郝瑞祥[1] 游小杰[1,2] CHEN Yueqing;GUO Xizheng;BU Xucong;HAO Ruixiang;YOU Xiaojie(School of Electrical Engineering,Beijing Jiaotong University,Beijing 100044,China;Collaborative Innovation Center of Railway Traffic Safety,Beijing 100044,China)

机构地区：[1]北京交通大学电气工程学院,北京100044 [2]轨道交通安全协同创新中心,北京100044

出　　处：《北京交通大学学报》2023年第5期126-135,共10页JOURNAL OF BEIJING JIAOTONG UNIVERSITY

基　　金：中央高校基本科研业务费专项资金(2022JBXT006);国家重点研发计划(2022YFB2404105)。

摘　　要：SiC MOSFET的快速开关过程带来开关振荡、电磁干扰(Electromagnetic Interference,EMI)问题,多电平有源驱动电路通过调节开关过程中的驱动电压可以优化其关断轨迹.针对有源驱动电路中间电平选取及作用时间的优化选择问题,提出一种SiC MOSFET关断轨迹优化方法.基于对关断机理的分析和等效电流斜率思路,建立SiC MOSFET关断轨迹预测模型,并利用所提基于目标函数的关断轨迹优化方法,求解有源驱动中间电平的优化作用时间和电平值,使得SiC MOSFET工作在关断电压尖峰和关断损耗的优化折衷点.研究结果表明:通过建立SiC MOSFET关断轨迹预测模型并结合所提关断轨迹优化方法,可准确预测并改善SiC MOSFET的关断轨迹,且模型最大误差不超过10%,验证了模型的准确性以及在不同驱动电阻下的适用性.The rapid switching process of SiC MOSFET introduces switching oscillations and Electro⁃magnetic Interference(EMI)concerns.To address these issues,multi-level active driving circuits offer the capability to optimize the turn-off trajectory of SiC MOSFET by adjusting the driving voltage dur⁃ing the switching process.In the context of active driving circuit,this work presents a method for opti⁃mizing the selection of intermediate levels and action timing,specifically focusing on the turn-off tra⁃jectory of SiC MOSFET.This method relies on an understanding of the turn-off mechanism and an equivalent current slope approach to create a prediction model for SiC MOSFET turn-off trajectory.It further leverages an objective-based optimization approach to determine the ideal action timing and lev⁃els for intermediate stages in the active driving circuit.The objective is to ensure that SiC MOSFET operates at an optimized compromise point,balancing turn-off voltage peak and turn-off loss.The re⁃search results indicate that the combination of the SiC MOSFET turn-off trajectory prediction model and the proposed optimization method effectively predicts and enhances the turn-off trajectory of SiC MOSFET.Notably,the model exhibits a maximum error of less than 10%,validating its accuracy and applicability under various gate resistances.

关 键 词：SiC MOSFET 开关特性 有源驱动 轨迹预测模型 

分 类 号：TM131.2[电气工程—电工理论与新技术]