电极间距对防原子氧聚硅氧烷薄膜性能的影响  

Effect of Electrode Spacing on the Properties of Anti-atomic Oxygen Polysiloxane Thin Film

作　　者：李毅 何延春[1] 王虎[1] 王兰喜[1] 曹生珠[1] 袁璐 王江伟 李中华[1] LI Yi;HE Yanchun;WANG Hu;WANG Lanxi;CAO Shengzhu;YUAN Lu;WANG Jiangwei;LI Zhonghua(Science and Technology on Vacuum Technology and Physical Laboratory,Lanzhou Institute of Physics,Lanzhou 730000,China)

机构地区：[1]兰州空间技术物理研究所真空技术与物理重点实验室,兰州730000

出　　处：《真空与低温》2024年第1期71-77,共7页Vacuum and Cryogenics

基　　金：国家自然科学基金(12305289,U1937601);国家重点研发计划(2022YFB3806300);甘肃省自然科学基金(23JRRA1363);国防基础科研项目(JCKY 2020203 b019);五院共性工艺技术研究项目(GXJS1701)。

摘　　要：与传统制备防护薄膜的方法相比,等离子体聚合法是一种更高效、干燥和简易的制备方法,可以在各种基底上制备数百纳米厚的致密薄膜涂层。采用等离子增强化学气相沉积(PECVD)法在大面积柔性聚酰亚胺Kapton基底上制备了聚硅氧烷防原子氧薄膜。用SEM、AFM、FTIR和XPS等表征分析了电极间距对聚硅氧烷薄膜性能的影响。结果表明,减小电极间距加速了单体的解离和碳基成分的氧化。随着电极距离的减小,薄膜的沉积速度增大,薄膜从有机无机聚硅氧烷薄膜(SiO_(x)C_(y)H_(z))向无机薄膜(SiO_(2))转化。薄膜中高解离能Si-O键的增多,降低了原子氧的侵蚀率。研究结果为用PECVD方法制备其他有机硅功能薄膜奠定了技术基础。Compared to conventional methods of preparing protective films,the plasma polymerization approach is a more efficient,dry,and simple preparation procedure that allows the preparation of dense thin films with a thickness of hundreds of nanometers on a variety of substrates.In this paper,anti-atomic oxygen polysiloxane thin film were prepared on large-area flexible Kapton substrate by plasma-enhanced chemical vapor deposition(PECVD).The effect of electrode spacing on the properties of anti-atomic oxygen polysiloxane thin film was investigated using SEM,AFM,FTIR and XPS.The results show that the reduction of electrode spacing accelerates the degree of monomer dissociation and the oxidation process of carbon-based components.With the decrease of electrode spacing,the deposition rate of the film increases,and the film transforms from organic-inorganic polysiloxane film(SiO_(x)C_(y)H_(z))to inorganic film(SiO_(2)).The increase of high dissociation energy Si-O bonds in the as-deposited films reduces the erosion rate of atomic oxygen of the films.This paper also establishes a technical foundation for the adjustment of the properties of other organosilicon functional films prepared by PECVD.

关 键 词：等离子增强化学气相沉积 六甲基二硅氧烷 电极间距 薄膜 原子氧 

分 类 号：TG174.444[金属学及工艺—金属表面处理] V45[金属学及工艺—金属学]