化学气相沉积ZnS、ZnSe研究进展  

Research Progress of Chemical Vapor Deposition ZnS and ZnSe

作　　者：赵小玻 韦中华 张旭[2,3] 钱纁 于浩海[1] ZHAO Xiaobo;WEI Zhonghua;ZHANG Xu;QIAN Xun;YU Haohai(Institute of Crystal Materials,Shandong University,Jinan 250100,China;Sinoma Synthetic Crystals Co.,Ltd.,Beijing 100018,China;Beijing Sinoma Synthetic Crystals Co.,Ltd.,Beijing 100018,China)

机构地区：[1]山东大学晶体材料研究院,济南250100 [2]中材人工晶体研究院有限公司,北京100018 [3]北京中材人工晶体研究院有限公司,北京100018

出　　处：《人工晶体学报》2023年第12期2125-2134,共10页Journal of Synthetic Crystals

摘　　要：化学气相沉积(CVD)ZnS、ZnSe具有较高的红外透过率及良好的光学、力学性能,是红外军用探测系统首选的红外光学材料。大尺寸、高均匀性ZnS、ZnSe材料的制备是未来研究的重要课题。本文介绍了CVD的原理及在沉积过程中存在的主要问题,阐述了高性能红外材料必备的光学性能,综述和分析了CVD ZnS、CVD ZnSe的研究进展,以及这两种材料主要缺陷形成机理与工艺控制研究。旨在改进生产工艺参数,为批量化制备高性能ZnS、ZnSe材料提供理论参考,以满足其在军事领域上的应用。Chemical vapor deposition(CVD)ZnS and ZnSe have high infrared transmittance and good optical and mechanical properties,and are the preferred infrared optical materials for infrared military detection systems.The preparation of largesized and highly homogeneous ZnS and ZnSe materials is an important topic for future research.This article introduces the principle of chemical vapor deposition and the main problems in the accumulation process,describes the necessary optical properties of high-performance infrared materials,summarizes and analyzes the research progress of CVD ZnS and CVD ZnSe,and main defect formation mechanism of the two materials as well as the process control research.It aims to improve the production process parameters and provide theoretical reference for the batch preparation of high-performance ZnS and ZnSe materials for military applications.

关 键 词：ZNS ZNSE 化学气相沉积 透过率 吸收系数 缺陷 红外光学材料 

分 类 号：TN219[电子电信—物理电子学] TN304.55[一般工业技术—材料科学与工程] TB34