薄膜体声波谐振器(FBAR)滤波器研究  

Study on Thin Film Bulk Acoustic Resonator(FBAR)Filter

作　　者：廖俊杰 冯耀刚 万蔡辛 蔡春华 秦明[1] 张志强[1] LIAO Junjie;FENG Yaogang;WAN Caixin;CAI Chunhua;QIN Ming;ZHANG Zhiqiang(Key Laboratory of MEMS of the Ministry of Education,Southeast University,Nanjing Jiangsu 210096,China;Will Semiconductor Co.,Ltd,Shanghai 201203,China;Shanghai Key Laboratory of Multidimensional Information Processing,East China Normal University,Shanghai 200241,China)

机构地区：[1]东南大学MEMS教育部重点实验室,江苏南京210096 [2]上海韦尔半导体股份有限公司,上海201203 [3]华东师范大学上海市多维度信息处理重点实验室,上海200241

出　　处：《传感技术学报》2023年第11期1669-1680,共12页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金项目(61604039);至善青年学者支持计划项目(2242019R40030)。

摘　　要：薄膜体声波谐振器(FBAR)滤波器具有小尺寸、高频、宽频带、高功率容量等特点,符合5G通信系统对射频滤波器的要求,因而成为射频滤波器的研究热点。对FBAR滤波器的结构原理、电路拓扑形式、关键材料和空腔结构方案四个方面进行了综合阐述与研究。首先介绍了FBAR的基本结构、描述了其工作原理,并指出用于衡量性能优劣的两个关键参数——有效压电耦合系数k_(eff)^(2)和品质因数Q。然后概括了FBAR滤波器的电路拓扑形式,并分析了Ladder形式、Lattice形式和Ladder-Lattice组合形式三种电路拓扑形式的特点。随后研究了FBAR滤波器的关键材料——压电材料与电极材料,并进行了性能特性的比较。其次总结了FBAR的空腔工艺制备方案,重点关注硅反面刻蚀型与空气隙型两大类,并给出了对比与讨论。最后对FBAR滤波器的进一步发展做出了展望。With the characteristics of small size.high frequency.wide band and high power capacity.the film bulk acoustic resonator(FBAR)filter meets the requirements of 5G communication systems for radio frequency(RF)filters.so it has become a research hotspot of RF filters.The FBAR filter is comprehensively expounded and studied including the structure principle.circuit topology.key materials and cavity process scheme.Firstly.the basic structure and working principle of FBAR is described.and two key parameters of the effective coupling coefficient k_(eff)^(2) and quality factor Q are pointed out to measure the performance.Secondly.the circuit topology of the FBAR filter is summarized.and the characteristics of three circuit topology forms of Ladder form.Lattice form and Ladder￣Lattice combination form are analyzed.Thirdly.the key materials of the FBAR filter.such as piezoelectric material and electrode material.are analyzed and compared.Fourthly.the cavity fabrication scheme of the FBAR filter is summarized.focusing on two types of silicon reverse etching type and air gap type.and comparison and discussion are offered.Finally.the further development of the FBAR filter is prospected.

关 键 词：MEMS FBAR滤波器 电路拓扑形式 关键材料 空腔结构方案 

分 类 号：TN713.5[电子电信—电路与系统]