过渡金属掺杂CdO基稀磁半导体材料的研究进展  

Research Progress in CdO-Based Dilute Magnetic Semiconductor Materials Doped by Transition Metals

作　　者：张晨 马勇 高湉 Zhang Chen;Ma Yong;Gao Tian(School of Mathematics and Physics,Shanghai University of Electric Power,Shanghai 201300,China)

机构地区：[1]上海电力大学数理学院,上海201300

出　　处：《微纳电子技术》2023年第12期1883-1891,共9页Micronanoelectronic Technology

基　　金：上海市自然科学基金资助项目(16ZR1413600)。

摘　　要：对近年来稀磁半导体材料的应用前景及过渡金属掺杂CdO材料的室温铁磁性研究进展进行了简单阐述。重点对不同过渡金属掺杂剂及其浓度对CdO磁性能的影响进行了介绍,并从近几年国内外研究中未掺杂、过渡金属掺杂、过渡金属共掺杂以及不同制备方法对CdO磁性能的影响及其磁性来源等方面进行了评述。概述了未掺杂和不同浓度Mn、Co单元素掺杂CdO材料对室温铁磁性的影响,并总结了近年来过渡金属掺杂CdO材料在稀磁半导体领域的研究进展。对比了不同过渡金属掺杂CdO基稀磁半导体材料的磁性能及磁性来源,并得出共掺杂工艺对提升CdO基稀磁半导体材料室温铁磁性有明显效果,最后对该领域的未来发展方向进行了展望。The application prospect of dilute magnetic semiconductor materials in recent years and the research progress of room temperature ferromagnetism of transition metal doped CdO materials are briefly expounded.The effects of different transition metal dopants and their concentrations on the magnetic properties of CdO are emphasisly introduced,and the effects of undoped,transition metal doped,transition metal co-doped and different preparation methods on the magnetic properties of CdO and their magnetic sources are reviewed in recent years at home and abroad.The effects of undoped and different concentrations of Mn,Co single-element doped CdO materials on room temperature ferromagnetism were summarized,and the research progress of transition metal doped CdO materials in the field of dilute magnetic semiconductors in recent years is summarized.The magnetic properties and magnetic sources of different transition metaldoped CdO-based dilute magnetic semiconductor materials are compared.And it is concluded that the co-doping process has obvious effect on the improvement of room temperature ferromagnetism of CdO-based dilute magnetic semiconductor materials,and finally the future development direction of the field is prospected.

关 键 词：自旋电子学 CDO 稀磁半导体 室温铁磁性 过渡金属 

分 类 号：TN304.7[电子电信—物理电子学]