基于范德瓦尔斯材料的红外光电探测器研究进展  

Recent Progress of Infrared Photodetectors Based van der Waals Materials

作　　者：陈昊[1] 黎德龙 CHEN Hao;LI Delong(College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,Guangdong,China)

机构地区：[1]深圳大学电子与信息工程学院,广东深圳518060

出　　处：《材料导报》2023年第S02期48-60,共13页Materials Reports

基　　金：国家自然科学基金(12374354,61905161)。

摘　　要：近年来,基于二维范德瓦尔斯材料的本征吸收、能带调制、结构设计以及新原理的红外光电探测器展现了巨大的潜力,并取得了突出的研究成果。对该领域的研究进展进行系统总结和分析,有助于进一步促进范德瓦尔斯材料在红外光探测领域的应用。基于此,本文首先概述了红外光电探测器的发展历程和分类。进而,重点总结并分析了范德瓦尔斯材料在红外光电探测器的红外光响应机制。在此基础上,进一步阐述了范德瓦尔斯材料红外光电探测器的性能优化方法、机制和进展。最后,对二维范德瓦尔斯材料在红外光探测器领域存在的问题和未来发展方向作了系统总结和展望。Recently,infrared photodetectors based on two⁃dimensional(2D)van der Waals materials have exhibited great potential due to their significant excellent optoelectronic properties.The intrinsic absorption,bandgap engineering,structural design,and novel principles of two⁃dimensional van der Waals materials enable them promising candidates for infrared optoelectronic detection.Therefore,a comprehensive summary and analysis of the research progress will contribute to further promoting the application of van der Waals materials in the infrared photodetection field.Firstly,a systematic introduction to the development of infrared optoelectronic detectors and an overview of two⁃dimensional van der Waals materials have been presented.Then,we highlight on the elaborating the infrared response mechanism of two⁃dimensional van der Waals materials.Based on this,further exploration is conducted on the performance optimization methods and progress of van der Waals materials in infrared photodetectors.Finally,the unresolved issues and challenges of the van der Waals materials based infrared photodetectors are summarized and discussed.

关 键 词：范德瓦尔斯材料 红外光电探测器 能带工程 过渡金属硫族化合物 层间激子 

分 类 号：O472[理学—半导体物理]