软击穿对压控磁各向异性磁隧道结及其读电路性能影响  

Effect of Soft Breakdown on the Performances of Voltage-controlled Magnetic Anisotropy Magnetic Tunnel Junction and Its Reading Circuits

作　　者：金冬月 曹路明 王佑 张万荣 贾晓雪 潘永安 邱翱 JIN Dongyue;CAO Luming;WANG You;ZHANG Wanrong;JIA Xiaoxue;PAN Yongan;QIU Ao(Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China;Hefei Innovation Research Institute,Beihang University,Hefei 230013,China)

机构地区：[1]北京工业大学信息学部,北京100124 [2]北京航空航天大学合肥创新研究院,合肥230013

出　　处：《北京工业大学学报》2024年第1期10-17,共8页Journal of Beijing University of Technology

基　　金：国家自然科学基金资助项目(61006059);北京市自然科学基金资助项目(4143059)。

摘　　要：为了解决软击穿导致的压控磁各向异性磁隧道结(voltage-controlled magnetic anisotropy magnetic tunnel junction,VCMA-MTJ)及其读电路性能下降的问题,在对VCMA-MTJ软击穿机理深入分析的基础上,修正了VCMA-MTJ的电学模型,设计了一种具有固定参考电阻的VCMA-MTJ读电路和一种具有参考电阻调控单元的VCMA-MTJ读电路,研究了软击穿对VCMA-MTJ电阻R_(t)、隧穿磁阻比率M、软击穿时间T_(s)以及VCMA-MTJ读电路读错误率的影响。结果表明:软击穿的出现会导致R_(t)和M均随应力时间t的增加而降低,T_(s)随氧化层厚度t_(ox)的增大而缓慢增加,却随脉冲电压V_(b)的增大而迅速减少,与反平行态相比,平行态的T_(s)更短且M降低50%所需时间更少;具有固定参考电阻的VCMA-MTJ读电路可有效避免读“0”错误率的产生,但读“1”错误率却随t的增加而上升,而具有参考电阻调控单元的VCMA-MTJ读电路可在保持读“0”正确率的同时,对读“1”错误率改善达54%,在一定程度上削弱了软击穿对VCMA-MTJ读电路的影响。To solve the performance degradation of voltage-controlled magnetic anisotropy magnetic tunnel junction(VCMA-MTJ) and its reading circuit caused by soft breakdown,a modified electrical model of VCMA-MTJ was established based on the soft breakdown mechanism,and a VCMA-MTJ reading circuit with a fixed reference resistance and a VCMA-MTJ reading circuit with a reference resistance control unit were designed to study the effect of soft breakdown on the resistance R_t,tunnel magneto-resistance ratio M,and soft breakdown time T_(s) of VCMA-MTJ as well as the read error rate of the VCMA-MTJ reading circuit.Results show that both R_(t) and M decrease with the increase of the stress time t due to the soft breakdown.T_(s) increases slowly with the increase of the thickness of the oxide layer t_(ox) and decreases rapidly with the increase of the pulse voltage V_b.T_(s) in the parallel state is shorter than that in the anti-parallel state,and it takes less time for the VCMA-MTJ in the parallel state to reduce M by 50%.The error rate of reading “0” in the VCMA-MTJ reading circuit with fixed reference resistance can be effectively avoided.However,the error rate of reading “1” increases with the increase of t.The VCMA-MTJ reading circuit with reference resistance control unit can not only keep the correctness of reading “0”,but also effectively improve the error rate of reading “1” by up to 54%,showing the ability to weaken the effect of the soft breakdown on the VCMA-MTJ reading circuit to a certain extent.

关 键 词：压控磁各向异性 磁隧道结 软击穿 应力时间 读电路 参考电阻调控单元 

分 类 号：TN389[电子电信—物理电子学] TN47