混合并联功率器件开关模式优化及特性分析  

Switching Mode Optimization and Characteristic Analysis of Hybrid Parallel Power Devices

作　　者：夏付炳 XIA Fu-bing(Xi'an Rail Transit Group Co.,Ltd.,Xi'an 710018,China)

机构地区：[1]西安市轨道交通集团有限公司,陕西西安710018

出　　处：《电力电子技术》2023年第12期137-140,共4页Power Electronics

基　　金：陕西省重点研发计划(2021GXLH-Z-013)。

摘　　要：在对比SiC MOSFET与Si IGBT器件开关特性的基础上,提出了一种SiC MOSFET和Si IGBT混合并联器件的优化开关模式,并结合系统稳态模型,分析了其非理想开关过程特性。最后利用双脉冲测试,对在不同开通/延迟时间下混合并联器件开关特性展开了实验。实验结果表明,所提开关模式能够同步实现SiC MOSFET扩容并降低Si IGBT的开关损耗,此处所得研究成果对于拓展两种开关器件的混合应用提供了技术参考。Based on the comparison of the switching characteristics of SiC MOSFET and Si ICBT devices,an optimized switching mode of SiC MOSFET and Si IGBT hybrid parallel devices is proposed,and the non-ideal switching process characteristics of the hybrid parallel devices are analyzed through the steady-state modeling.Finally,the switching characteristics of hybrid parallel devices under different on/off times are tested by using double pulse test.The experimental results show that the proposed switching mode can synchronously realize the expansion of SiC MOSFET and reduce the switching loss of Si IGBT.The research results obtained provide a technical reference for expanding the hybrid application of the two switching devices.

关 键 词：器件 混合并联 开关特性 

分 类 号：TN342[电子电信—物理电子学]