模电教学中BJT与MOS的近似性分析  

Approximation Analysis between BJT and MOS in Analog Circuit Teaching

作　　者：周波[1] 郝蕴 ZHOU Bo;HAO Yun(School of Integrated Circuits and Electronics,Beijing Institute of Technology,Beijing 100081,China)

机构地区：[1]北京理工大学集成电路与电子学院,北京100081

出　　处：《电气电子教学学报》2023年第6期116-119,共4页Journal of Electrical and Electronic Education

基　　金：国家自然科学基金面上项目(61674014)。

摘　　要：BJT与MOS器件及电路是模电重要内容;教学中二者的电路模型与分析方法不一致,学生困惑于两套不同的器件及电路知识。在遵循器件及电路工作原理的基础上,首次对二者在小信号模型、电路参数、I-V方程、特性曲线、工作区间、指标计算上进行完整的近似性分析及一致性推导;在二者电路计算中,用三种单管单级放大器实例,阐述近似分析方法的便利性,对模拟电路的教学具有重要的指导意义。BJT and MOS devices/circuits are important parts of analog circuits.However,the inconsistent circuit models and analysis methods between MOS and BJT in teaching make students confused.The authors conduct the approximation analysis between MOS and BJT,from small-signal model,circuit parameter,I-V equation,characteristic curve,working region,to index calculation.All the consistency results conform to the working principles of BJT/MOS devices and circuits.By taking three single-transistor single-stage amplifiers for example,the convenience of using approximation analysis method is obvious in MOS and BJT circuits,which can serve as a significant guide in the teaching of analog circuits.

关 键 词：近似性分析 MOS场效应管 双极型晶体管 

分 类 号：G426[文化科学—课程与教学论]