基于传输线模型法ITO/p-Si接触性能研究实验设计  

Experimental Design for ITO/p-Si Contact Properties Based on Transmission Line Model

作　　者：李金泽 许杰 LI Jinze;XU Jie(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China)

机构地区：[1]南京邮电大学集成电路科学与工程学院,南京210023

出　　处：《实验科学与技术》2023年第6期14-18,共5页Experiment Science and Technology

基　　金：国家自然科学基金(61904088)。

摘　　要：针对传统透明氧化物薄膜电学性能测试实验内容单一的问题,结合教师教学与科研项目,设计了“基于传输线模型法ITO/p-Si接触性能研究”的探究性实验和相应考核体系。实验通过测量不同条件下制备的ITO/p-Si接触的电学性能,分析ITO/p-Si的比接触电阻和势垒高度变化规律和原因。考核体系涵盖了包括文献查阅、产品制备、性能测试、数据分析和扩展实验等环节。实验综合性较强,有递进性,能够巩固专业理论知识,激发学生的学习兴趣,增强学生的创新能力。In response to the problem of single content in traditional transparent oxide thin film electrical performance testing experiments,combined with teachers’lectures and research project,an exploratory experiment“ITO/p-Si contact properties based on transmission line model”and the corresponding assessment system were designed.The variety law and reason of contact resistivity and barrier height of ITO/p-Si contacts under different preparation conditions were analyzed by testing their electrical properties.The experiment assessment system covers literature review,sample preparation,performance measurement,data analysis and extension experiment.The experiment is comprehensive and progressive,which can consolidate professional theoretical knowledge,stimulate students’interest in learning,and increase students’innovative ability.

关 键 词：接触性能 传输线模型 实验设计 透明导电氧化物 

分 类 号：O472.4[理学—半导体物理]