GaN器件辐照效应与LDO电路的单粒子敏感点协同设计研究  

Collaborative Design Study of the Irradiation Effect of GaN Devices and the Single Event Irradiation Sensitive Point of LDO Circuits

作　　者：朱峻岩 张优 王鹏 黄伟 张卫[1] 邱一武 周昕杰 ZHU Junyan;ZHANG You;WANG Peng;HUANG Wei;ZHANG Wei;QIU Yiwu;ZHOU Xinjie(School of Microelectronics,Fudan University,Shanghai 200433,China;China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China)

机构地区：[1]复旦大学微电子学院,上海200433 [2]中科芯集成电路有限公司,江苏无锡214072

出　　处：《电子与封装》2024年第1期61-67,共7页Electronics & Packaging

基　　金：国家自然科学基金(6202780115)。

摘　　要：创新地开展p型栅GaN器件的单粒子辐照与建模研究,提取的单粒子激励电流被加载用于全GaN的低压差线性稳压器(LDO)稳压电路的单粒子设计中,获得了该电路单粒子敏感节点,最终得到该节点在重载状态与轻载状态时对应的单粒子瞬态(SET)响应分别为500 mV/60 ns,1210 mV/60 ns。上述研究建立起GaN器件-全GaN基电路的T-CAD/SPICE单粒子效应协同设计方法。Single event irradiation and modeling of p-gate GaN devices are innovatively carried out.The extracted single event excitation current is used into the single event design of a full GaN low dropout regulator(LDO)voltage stabilizing circuit,and a single event sensitive node of the circuit is obtained.The single event transient(SET)responses of the node corresponding to the heavy load state and the light load state are 500 mV/60 ns and 1210 mV/60 ns respectively.The above study establishes a T-CAD/SPICE single event effect collaborative design method for GaN devices and all GaN based circuits.

关 键 词：GaN辐照效应 GaN LDO 抗辐照加固 p型栅GaN器件 

分 类 号：TN307[电子电信—物理电子学]