基于反向恢复电流的绝缘栅双极型晶体管模块动态结温估测方法  

Estimation method of dynamic junction temperature of insulated gate bipolar transistor module based on reverse recovery current

作　　者：董超[1,2] 王鹏宇 杜明星[1,2] DONG Chao;WANG Pengyu;DU Mingxing(Tianjin Key Laboratory of Complex System Control Theory and Application,Tianjin University of Technology,Tianjin 300384,China;School of Electrical Engineering and Automation,Tianjin University of Technology,Tianjin 300384,China)

机构地区：[1]天津理工大学天津市复杂系统控制理论及应用重点实验室,天津300384 [2]天津理工大学电气工程与自动化学院,天津300384

出　　处：《天津理工大学学报》2023年第6期20-25,共6页Journal of Tianjin University of Technology

基　　金：天津市技术创新引导专项基金(20YDTPJC00510)。

摘　　要：针对传统结温估测方法响应速度慢、测量误差大问题,采用绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)模块的反向恢复电流作为温敏电参数,提出一种新型结温估测方法.分析了IGBT模块结温和负载电流对反向恢复电流的影响机理,并建立了三者间的理论关系.考虑实际工况并采用试验数据拟合得到IGBT模块的结温预测模型,通过比较试验测量数据与预测模型计算结果的差异,证实了采用反向恢复电流提取IGBT模块动态结温的估测方法具有较高的估测精度和较快的响应速度.Aiming at problems of slow responses and large measurement errors of traditional junction temperature estimation methods,this paper selects the reverse recovery current of the insulated gate bipolar transistor(ICBT)module as the temperature-sensitive electrical parameter,and proposes the new junction temperature estimation method.For the IGBT module,the influence mechanism of the junction temperature and the load current on the reverse recovery current is analyzed in detail,and the theoretical relation between the three is also derived.Considering actual working conditions and ftting experimental data,the junction temperature prediction model of the IGBT module is obtained.By comparing the difference between experimental data and calculation results of the prediction model,it is confirmed that the proposed estimation method of extracting the dynamic junction temperature of the IGBT module by using the reverse recovery current has high estimation accuracy and fast response speed.

关 键 词：绝缘栅双极型晶体管 反向恢复电流 负载电流 结温 

分 类 号：TN32[电子电信—物理电子学]