SiGe电光调制器研究进展  

Research Progress of SiGe Electro-Optical Modulator

作　　者：王迪 冯松[1] 陈梦林 刘勇 胡祥建 冯露露 WANG Di;FENG Song;CHEN Menglin;LIU Yong;HU Xiangjian;FENG Lulu(School of Science,Xi′an Polytechnic University,Xi′an 710048,China)

机构地区：[1]西安工程大学理学院,陕西西安710048

出　　处：《电子科技》2024年第2期46-54,共9页Electronic Science and Technology

基　　金：国家重点研发计划(2018YFB2200500);国家自然科学基金(61204080);国家重点实验室基金(SKL201804);陕西省重点研发计划(2022GY-012);西安市科技计划(2020KJRC0026)。

摘　　要：光子调制器是光纤通信系统中的核心器件,主要对光信号进行调制,实现信号从电域到光域的转换。随着硅基半导体工艺的发展,硅基光子调制器逐渐成为了主流硅光子器件,基于硅工艺技术的GHz带宽调制器的实现也为硅光子学的发展奠定了基础。作为一种用于短距离光互连的高性能光调制器,SiGe光吸收调制器受到了较多关注。文中讨论了高性能SiGe电光调制器的发展现状,对国内外硅基光子调制器的研究进展进行分析,讨论了PIN、PN结等电学调制结构,为研发高速率、低损耗的光子调制器提供了思路。Photon modulator is the core device in the optical fiber communication system,which mainly modulates the optical signal to realize the conversion of the signal from the electrical domain to the optical domain.With the development of silicon based semiconductor technology,silicon based photonic modulator has gradually become a mainstream silicon photonic device.The realization of GHz bandwidth modulator based on silicon technology also lays a foundation for the development of silicon photonics.As a high performance optical modulator for short distance off optical interconnection,SiGe optical absorption modulator has gotten much attention.This study discusses the development status of high-performance SiGe electro-optic modulator,mainly analyzes the research progress of silicon based photonic modulator at home and abroad,and discusses the electrical modulation structures such as PIN,PN junction,which provides a way to continue to develop high-speed,low loss photonic modulator in the future.

关 键 词：硅光子学 光子器件 调制器 锗硅 PIN PN 量子阱 研究进展 

分 类 号：TN256[电子电信—物理电子学]