110~200GHz频段InP单行载流子光电二极管  

InP Uni⁃Traveling⁃Carrier Photodiode at 110-200GHz

作　　者：杨大宝 邢东[1,2] 赵向阳 刘波[1,2] 冯志红 Yang Dabao;Xing Dong;Zhao Xiangyang;Liu Bo;Feng Zhihong(National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]固态微波器件与电路全国重点实验室,石家庄050051 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2024年第1期39-44,共6页Semiconductor Technology

摘　　要：设计制备了一种基于InP材料低偏压工作的单行载流子光电二极管(UTC-PD),该器件的工作频率范围为110~200 GHz。为提升器件的带宽特性,UTC-PD芯片的吸收层采用p型高斯掺杂的InGaAs材料,芯片的InP衬底减薄至12μm。UTC-PD采用背照式的方式输入光信号。通过倒装焊的形式将芯片安装在厚度为50μm的AlN基片上的共面波导焊盘上进行测试。在-3 V偏压和155μm波长输入光条件下,制备器件的响应度超过02 A/W;在110 GHz处获得最高输出功率为-56 dBm,19783 GHz处的输出功率最低为-106 dBm。An uni-traveling-carrier photodiode(UTC-PD)based on InP with low bias voltage operating at a frequency range from 110 GHz to 200 GHz was designed and fabricated.To improve the bandwidth characteristics of the device,a p-type Gaussian doping InGaAs in absorption layer of the UTC-PD chip was adopted,and InP substrate thickness of the chip was reduced to 12μm.A back-illuminated way was adopted for the UTC-PD to input optical signals.The chip was mounted on the co-planar waveguide pad of AlN substrate with a thickness of 50μm by flip-chip bonding for testing.The re-sponsivity of the fabricated device is over 02 A/W under-3 V bias voltage and 155μm wavelength input light conditions.The maximum output power is-56 dBm at 110 GHz,and the minimum output power is-106 dBm at 19783 GHz.

关 键 词：低偏压 单行载流子光电二极管(UTC-PD) 高斯掺杂 背照式 响应度 

分 类 号：TN364[电子电信—物理电子学]