基于键合金丝补偿的太赫兹瓦级功率合成技术研究  

Research on watt-level power combining technology at terahertz band based on bonding wire compensation

作　　者：朱翔[1,2] 张俊杰 成海峰 郭健[3] 施永荣[1] 王维波 ZHU Xiang;ZHANG Jun-Jie;CHENG Hai-Feng;GUO Jian;SHI Yong-Rong;WANG Wei-Bo(Key Laboratory of Dynamic Cognitive System of Electromagnetic Spectrum Space,Ministry of Industry and Information Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China;Nanjing Electronic Device Institute,Nanjing 210016,China;State Key Laboratory of Millimeter Waves,Southeast University,Nanjing 210096,China)

机构地区：[1]南京航空航天大学电磁频谱空间认知动态系统工业和信息化部重点实验室,江苏南京211106 [2]南京电子器件研究所,江苏南京210016 [3]东南大学毫米波国家重点实验室,江苏南京210096

出　　处：《红外与毫米波学报》2023年第6期748-755,共8页Journal of Infrared and Millimeter Waves

基　　金：中央高校基本科研业务费专项资金资助(NF2020003);重点实验室基金(612502200302)。

摘　　要：针对太赫兹波段固态大功率应用需求,基于氮化镓功率放大器单片集成电路(Monolithic Microwave Integrated Circuit,MMIC),采用功率合成技术实现了太赫兹波段瓦级功率输出。通过太赫兹波段微带/波导转换结构和键合金丝补偿技术,结合E面T型结二路合成功率分配/合成器,将两片MMIC封装成最大输出功率为160 mW的功率单元模块。在此基础上,采用八路E面合成器设计了频率覆盖180~238 GHz的十六路功率合成放大器。在漏极电压为+10 V时,带内输出功率大于300 mW,189 GHz输出功率达到了1.03 W。With the application demands of solid-state high power in the terahertz(THz)band,a THz-band watt-level power output is achieved by adopting GaN power amplifier(PA)MMIC and power combining technology.Microstrip-waveguide transition,and the low-loss interconnection based on the gold wire compensation are used to package a PA module composed of two PA MMICs and an E-plane T-junction two-way power splitter/combiner.Maximum output power of 160 mW is achieved.Based on the module and an eight-way E-plane combiner,a sixteen-way power combining amplifier is designed across the frequency range of 180 to 238 GHz.Output power of more than 300 mW is achieved with+10 V drain voltage,and the maximum power is 1.03 W at 189 GHz.

关 键 词：太赫兹 金丝补偿 氮化镓 功率分配/合成器 

分 类 号：TN722.75[电子电信—电路与系统]