Zn杂质诱导GaInP/AlGaInP红光半导体激光器量子阱混杂的研究  

Study on Quantum Well Intermixing Induced by Zn Impurities in GaInP/AlGaInP Red Semiconductor Lasers

作　　者：何天将 刘素平[1] 李伟[1] 林楠[1,2] 熊聪 马骁宇[1,2] HE Tianjiang;LIU Suping;LI Wei;LIN Nan;XIONG Cong;MA Xiaoyu(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《光子学报》2024年第1期1-12,共12页Acta Photonica Sinica

基　　金：国家自然科学基金(No.62174154)。

摘　　要：在GaAs基GaInP/AlGaInP单量子阱结构外延片上分别使用磁控溅射设备生长ZnO薄膜和等离子增强化学气相沉积设备生长SiO2薄膜,以ZnO介质层作为Zn杂质诱导源,采用固态扩Zn的方式对激光器进行选择性区域诱导以制备非吸收窗口来提高器件的腔面光学灾变损伤阈值,从而提高半导体激光器的输出功率和长期可靠性。在580~680℃、20~60 min退火条件下对Zn杂质诱导量子阱混杂展开研究,实验发现,ZnO/SiO2或ZnO/Si3N4复合介质层的采用比单一Zn介质层的杂质诱导蓝移量大,且在680℃、30 min的条件下获得了最大55 nm的蓝移量。分析结果表明,介质层所施加的压应变会将外延片表面GaAs层中Ga原子析出,促使Zn原子进入外延层中以诱导量子阱混杂。通过测量光致发光光谱发现发光强度并没有明显下降,可为后期器件制作提供借鉴。As the photovoltaic conversion efficiency and output power of high-power lasers continually ascend,the escalating impact of Catastrophic Optical Damage(COD)effects occurring at the laser cavity surface poses an increasingly severe challenge.Consequently,a post-processing technique involving Quantum Well Intermixing(QWI)can be employed at the cavity surface to fabricate a Non-absorption Window(NAW),thereby augmenting the COD threshold and amplifying the output power.Given the swift diffusion of Zn in GaAs-based semiconductor lasers,Zn impurity-induced QWI is favorably regarded.In the epitaxial growth of GaAs-based GaInP/AlGaInP single quantum well structures,ZnO thin films were selectively grown on the epitaxial wafer using magnetron sputtering equipment.Utilizing ZnO as the medium for Zn impurity induction,a solid-state Zn diffusion process was employed to selectively induce regions in the laser,thereby increasing the bandwidth at the laser cavity surface to prepare NAW and elevate the threshold for optical damage,consequently enhancing the long-term reliability and output power of the semiconductor laser.In addition to the induction annealing experiments conducted with a single ZnO dielectric layer,experiments were also conducted with composite dielectric layers ZnO/Si3N4 and ZnO/SiO2.These experiments involved the growth of these composite layers using Plasma Enhanced Chemical Vapor Deposition(PECVD)equipment atop the ZnO dielectric layer.Initially,through simulation calculations,it is observed that for p-type doping such as Mg impurity,as the doping concentration increases,Zn diffusion in GaAs or InP accelerates,resulting in deeper diffusion depths under the same time conditions.Conversely,for n-type doping such as Si,an increase in doping concentration impedes Zn diffusion.Moreover,the diffusion of Zn in GaAs-based epitaxial wafers surpasses that in InP-based wafers.During the diffusion process,the composite dielectric layers ZnO/Si3N4 and ZnO/SiO2 can alter the type of stress exerted by the singular ZnO diel

关 键 词：半导体激光器 量子阱混杂 复合介质层 蓝移 非吸收窗口 

分 类 号：TN248.4[电子电信—物理电子学]