基于分子动力学的薄膜铜预应力模型的建立与正确性验证  

Establishment and Correctness Verification of the Thin-Film Copper Prestress Model Based on Molecular Dynamics

作　　者：沈伟涛 Shen Weitao(Xi'an Institute of Aeronautical Computing Technology,Xi'an,Shaanxi 710068,CHN)

机构地区：[1]西安航空计算技术研究所,陕西西安710068

出　　处：《模具制造》2024年第1期79-81,共3页Die & Mould Manufacture

摘　　要：通过分子动力学方法建立的铜薄膜的仿真模型,并通过添加预应变的方法获得了预应力场模型。对于建立的预应力场模型模型通过可视化的方式以及内应力计算分析,发现:当预变形量大于等于8%时,模型内部的位错会释放形成位错模型,不是研究所需要的预应力场模型;当预变形量小于8%时,模型内部无位错形成,但存在预设的预应力场,是研究预应力场所需要的模型。该模型可以用来研究与应力场下薄膜初始塑性的形核及判据等。In this paper,the simulation model of copper thin film is established by molecular dynamics method,and the prestress field model is obtained by adding prestrain method.Through visualization and calculation analysis of internal stress,it is found that when the predeformation is greater than or equal to 8%,the dislocation in the model will be released to form a dislocation model,which is not the prestress field model required by the research.When the predeformation is less than 8%,no dislocation is formed inside the model,but there is a preset prestressed field,which is the required model for the study of prestressed sites.The model can be used to study the nucleation and criterion of initial plasticity of thin film under stress field.

关 键 词：分子动力学 预应力场 铜薄膜 

分 类 号：TG659[金属学及工艺—金属切削加工及机床]