半导体材料CMP过程中磨料的研究进展  

Research Progress of Abrasives in Semiconductor Material CMP Process

作　　者：何潮 牛新环 刘江皓 占妮 邹毅达 董常鑫 李鑫杰 He Chao;Niu Xinhuan;Liu Jianghao;Zhan Ni;Zou Yida;Dong Changxin;Li Xinjie(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China;Hebei Collaborative Innovation Center of Microelectronic Materials and Technology in Ultra Precision Processing,Tianjin 300130,China;Hebei Engineering Research Center of Microelectronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130 [3]河北省微电子超精密加工材料与技术协同创新中心,天津300130 [4]河北省微电子专用材料与器件工程中心,天津300130

出　　处：《微纳电子技术》2024年第1期21-34,共14页Micronanoelectronic Technology

基　　金：国家02科技重大专项(2016ZX02301003-004-007);国家自然科学基金(62074049);河北省自然科学基金(F2021202009)。

摘　　要：对磨料在半导体材料化学机械抛光(CMP)中的应用和研究进展进行了简单阐述,从各代半导体材料制成半导体器件的加工要求介绍了磨料在半导体材料CMP中的重要性,从CMP过程中磨料与半导体材料的相互作用介绍了磨料在半导体材料CMP中的环保性,从磨料的改性和制备介绍了磨料在半导体材料CMP中应用的限制性,重点从半导体材料的去除速率和表面质量介绍了磨料对半导体材料抛光性能的影响,并对国内外研究中单一磨料、混合磨料和复合磨料对半导体材料抛光性能的影响进行了评述,总结了近年来磨料在半导体材料CMP中的研究进展。最后,对磨料在半导体材料CMP中存在的共性问题进行了总结,并对该领域所面临的挑战及发展方向进行了展望。The application and research progress of abrasives in semiconductor material chemical mechanical polishing(CMP)are briefly described.The importance of abrasives in CMP of semiconductor materials is introduced from the processing requirements of semiconductor devices made from various generations of semiconductor materials.The environmental friendliness of abrasives in CMP of semiconductor materials is introduced from the interaction between abrasives and semiconductor materials during CMP process.The limitations of the application of abrasives in semiconductor material CMP are introduced from the modification and preparation of abrasives.The effect of abrasives on the polishing properties of semiconductor materials is introduced in terms of the removal rate and surface quality of semiconductor materials.The effects of single abrasives,mixed abrasives and composite abrasives on the polishing properties of semiconductor materials at home and abroad are reviewed.The research progress of abrasives in semiconductor material CMP in recent years is summarized.Finally,the common problems of abrasives in semiconductor material CMP are summarized,and the challenges and development directions in this field are prospected.

关 键 词：化学机械抛光(CMP) 抛光性能 磨料 去除速率 表面质量 

分 类 号：TN305.2[电子电信—物理电子学] TQ421.4[化学工程]