基于半导体碟片腔内倍频的高功率490 nm激光器  

High Power 490 nm Laser Based on Semiconductor Disk Intracavity Frequency Doubling

作　　者：于圣杰 冯健 张新[1] 肖垚 张志成 王俊 佟存柱[1] Yu Shengjie;Feng Jian;Zhang Xin;Xiao Yao;Zhang Zhicheng;Wang Jun;Tong Cunzhu(State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,Jilin,China;Suzhou Everbright Photonics Co.,Ltd.,Suzhou 215163,Jiangsu,China)

机构地区：[1]中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春130033 [2]苏州长光华芯光电技术股份有限公司,江苏苏州215163

出　　处：《中国激光》2023年第23期46-50,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金杰出青年基金(62025506)。

摘　　要：报道了基于半导体碟片激光倍频实现的高功率青色(蓝绿光)激光,连续输出功率可达到4.8 W。通过半导体碟片热管理优化和金刚石热沉预金属化,获得了最大功率为22.5 W、光-光转换效率为42.7%的980 nm基频光输出。通过V型腔LBO(LiB3O5)晶体倍频实现了4.8 W 490 nm激光输出,总的光-光转换效率为15.4%,单位泵浦面积产生的蓝绿光光强为3.8 kW/cm^(2)。Objective The attenuation coefficients of blue and green light in the 470‒580 nm band are the smallest in seawater,especially at the peak of transmittance near 490 nm.Therefore,blue-green lasers have important application prospects in underwater communications,laser detection,and radars.Currently,blue-green lasers can be realized using a middle-infrared laser quadruple frequency,solid-state laser sum frequency,and gas laser and AlGaN semiconductor laser direct excitation.However,these methods have low energy conversion efficiency and poor beam quality.The advantages of semiconductor disk lasers used to produce blue and green lasers are good beam quality,high-frequency doubling efficiency,and improved stability and reliability.The thermal problem is a key factor affecting the performance of semiconductor disk lasers and must be improved by optimizing the packaging structure.The semiconductor disk packaging process uses Ti-Pt-Au as the bonding layer and realizes bonding between the chip and diamond by the solid-liquid diffusion bonding of gold and indium.Pt acts as a diffusion medium for bonding.The experiment conducted herein identified that this method has some problems.Pt tends to spread onto the diamond surface and condense to form points during electron-beam evaporation.Packaging quality decreases and thermal resistance increases,limiting laser performance improvement.Methods The epitaxial structure of the 980 nm semiconductor disk consists of 26 pairs of distributed Bragg reflectors with undoped AlAs/GaAs layers,six pairs of active regions with InGaAs double quantum wells,and a high bandgap energy cap layer(Fig.1).The quantum well spatial position in the epitaxial structure of the semiconductor disk must coincide with the standing-wave peak at the designed wavelength(Fig.2).Based on the Ti-Pt-Au packaging technology,a Cu-Sn alloy with high thermal conductivity is selected as the barrier layer to increase the thickness between Pt and diamond.Pt is prevented from condensing on the diamond surface and the pack

关 键 词：激光器 半导体碟片激光器 封装工艺 光泵浦 腔内倍频 

分 类 号：TN248.4[电子电信—物理电子学] TN365