基于共振隧穿二极管的太赫兹技术研究进展  

Recent Progress of Terahertz Technology Based on Resonant Tunneling Diode

作　　者：刘军 王靖思 宋瑞良[1] 刘博文 刘宁[1] LIU Jun;WANG Jingsi;SONG Ruiliang;LIU Bowen;LIU Ning(Beijing Research and Development Center,The 54th Research Institute of CETC,Beijing 100041,China;Beijing Institute of Tracking and Telecommunication Technology,Beijing 100094,China)

机构地区：[1]中国电子科技集团公司第五十四研究所北京研发中心,北京100041 [2]北京跟踪与通信技术研究所,北京100094

出　　处：《无线电通信技术》2024年第1期58-66,共9页Radio Communications Technology

基　　金：国家重点研发计划(2023YFE0206600)。

摘　　要：共振隧穿二极管(Resonant Tunneling Diode, RTD)是一种基于量子隧穿效应的半导体器件,同时具有非线性特性和负阻特性,通过改变偏置电压可以作为太赫兹源和太赫兹探测器,在未来6G技术中通信感知一体化方面具有优势。简要总结了基于RTD实现的器件的工作原理,对基于RTD实现的太赫兹源和太赫兹探测器、太赫兹通信系统以及太赫兹雷达系统等太赫兹技术的研究进展进行介绍,并对当前存在的技术挑战和未来的发展方向进行探讨。基于RTD的太赫兹技术凭借其突出的优势,将成为未来电子器件领域重要的发展方向。Resonant Tunneling Diode(RTD)that has both nonlinear and negative resistance characteristics is a semiconductor device based on the quantum tunneling effect.Advantages of RTD include the facts that they can operate both as an oscillator and detector by changing the bias voltage and show advantages in the integration of communication and sensing for 6G.This paper introduces working principles of RTD and the research progress of terahertz technology based on RTD from the aspects of terahertz sources,terahertz detectors,terahertz communication system and terahertz radar system,and discusses about current technological challenges and future perspectives.RTD-based terahertz technology will become an important development direction in the field of electronic devices in the future due to its outstanding advantages.

关 键 词：共振隧穿二极管 太赫兹源 太赫兹通信 太赫兹探测器 

分 类 号：TN919.23[电子电信—通信与信息系统]