Moiré potential renormalization and ultra-flat bands induced by quasiparticle-plasmon coupling  

作　　者：Linghan Zhu Haonan Wang Li Yang 

机构地区：[1]Department of Physics,Washington University in St.Louis,St.Louis,MO 63130,USA [2]Institute of Materials Science and Engineering,Washington University in St.Louis,St.Louis,MO 63130,USA

出　　处：《npj Computational Materials》2023年第1期2279-2285,共7页计算材料学（英文）

基　　金：We acknowledge valuable discussions with Yufeng Liang,Shiyuan Gao,and Xiaobo Lu.L.Z.and L.Y.are supported by the National Science Foundation(NSF)grant No.DMR-2124934;H.W.is supported by the Air Force Office of Scientific Research(AFOSR)grant No.FA9550-20-1-0255;This work uses the Extreme Science and Engineering Discovery Environment(XSEDE),which is supported by National Science Foundation(NSF)grant No.ACI-1548562.The authors acknowledge the Texas Advanced Computing Center(TACC)at The University of Texas at Austin for providing HPC resources.

摘　　要：Moirépotential profile can form flat electronic bands and manifest correlated states of electrons,where carrier doping is essential for observing those correlations.In this work,we uncover a hidden but remarkable many-electron effect:doped carriers form a two-dimensional plasmon and strongly couple with quasiparticles to renormalize moirépotential and realize ultra-flat bands.Using many-body perturbation theory,we demonstrate this effect in twisted MoS_(2)/WS_(2) heterobilayer.The moirépotential is significantly enhanced upon carrier doping,and the bandwidth is reduced by order of magnitude,leading to drastic quenching of electronic kinetic energy and stronger correlation.We further predict that the competition between correlated mechanisms can be effectively controlled via doping,giving hope to a quantum transition between Mott and charge-transfer insulating states.Our work reveals that the potential renormalization effect of doping is much more significant in determining and controlling many-electron electronic correlations than sole filling-factor tuning in semiconducting moirécrystals.

关 键 词：BANDS DOPING POTENTIAL 

分 类 号：O46[理学—电子物理学]