GaN based ultraviolet laser diodes  

作　　者：Jing Yang Degang Zhao Zongshun Liu Yujie Huang Baibin Wang Xiaowei Wang Yuheng Zhang Zhenzhuo Zhang Feng Liang Lihong Duan Hai Wang Yongsheng Shi 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2024年第1期6-15,共10页半导体学报（英文版）

基　　金：This work was supported by the National Key R&D Program of China(2022YFB3605104);National Natural Science Foundation of China(62250038,61904172,61974162,62034008,62074142,and 62074140);Strategic Priority Research Program of Chinese Academy of Sciences(XDB43030101);Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD016).

摘　　要：In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.

关 键 词：DIODES LASER GAN 

分 类 号：TN31[电子电信—物理电子学] TN23